The structure of Sb-terminated GaAs(001) surfaces

Whitman, L. J.; Bennett, B. R.; Kneedler, E.; Jonker, B. T.; Shanabrook, B. V.

doi:10.1016/s0039-6028(99)00701-3

Cited by 34 publications

(20 citation statements)

References 21 publications

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“…The structure fulfills electroncounting rules. Our structure is significantly different from the structure proposed by Whitman et al [8] for Sb-on-GaAs-(2×8), which incorporated Sb In antisite defects, no rebonded α2-like In atoms, and no trench dimer. Additionally, their structure is asymmetric with respect to the centerline of the unit cell, a quality that does not appear to be present in our images of this structure.…”

Section: Resultscontrasting

confidence: 97%

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Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

et al. 2001

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We have studied the structure of MBE-grown InAs(001)-(2×4) surfaces exposed to low Sb 2 fluxes by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT). Experimentally, we observe an Sb-terminated α2(2x4) phase over a wide range of temperatures (400-510 °C) for low Sb 2 flux (<0.1 ML/s), whereas temperature and As 2 flux must be carefully controlled to achieve the same As-terminated surface structure. At lower temperatures, we observe indications of an Sb-terminated (2x8) symmetry surface phase, and we report briefly on its proposed structure and stability, as well as its possible role in subsequent formation of the Sb-terminated (1x3) phase found at typical Sb 2 fluxes used during heterostructure growth.

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Section: Resultscontrasting

confidence: 97%

“…[1] Unlike the case of Sb on GaAs(001) [8] we find no evidence in RHEED that any intermediate phases form at these temperatures. However, we find at lower temperatures that an additional surface structure can form which has a (2x8) symmetry.…”

Section: Resultscontrasting

confidence: 78%

Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

et al. 2001

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“…1(b) within 10 s from the start of the Sb soaking step. A 2 Â 8 RHEED pattern is typically associated with Ga-Sb bonds [17] and is indicative of a monolayer of Sb atoms formed on the surface [18]. Thus, this 2 Â 8 surface reconstruction implied that all of the As atoms at the As-terminated surface had been completely replaced by Sb atoms, forming a single monolayer of Sb with Ga-Sb bonds on the film surface.…”

Section: Resultsmentioning

confidence: 88%

Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process

Tan

Jia

Loke

et al. 2015

Journal of Crystal Growth

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“…Therefore, to clarify the surface-related spectral features and to justify the presence of SCLS's found, we have analyzed a so-called difference line shape for two spectra measured in different surface-sensitive conditions by varying the emission angle and kinetic energy of photoelectrons. Furthermore, the As 3d emission from the Sb/ InAs͑100͒͑2 ϫ 4͒ surface, where the substitution of surface As-dimer atoms by Sb is shown to occur similarly to the Sb/ GaAs͑100͒͑2 ϫ 4͒ system, [28][29][30][31][32][33][34][35] provides the As 3d line shape for components used in the fittings.…”

Section: Introductionmentioning

confidence: 99%

Electronic and structural properties ofGaAs(100)(2×4)and
Laukkanen
¹
,
Kuzmin
²
,
Perälä
³

et al. 2005
Phys. Rev. B
41
2
13
0
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Electronic and structural properties of GaAs͑100͒͑2 ϫ 4͒, InAs͑100͒͑2 ϫ 4͒, and Sb/ InAs͑100͒͑2 ϫ 4͒ reconstructed surfaces have been studied by synchrotron-radiation photoelectron spectroscopy and scanning tunneling microscopy ͑STM͒. Based on the difference spectrum of As 3d core-level spectra of III-As͑100͒͑2 ϫ 4͒, measured in different surface-sensitivity conditions, as well as the line shape of the As 3d emission from the Sb-induced ͑2 ϫ 4͒ surface, we give evidence that the As 3d spectra of GaAs͑100͒͑2 ϫ 4͒ and InAs͑100͒͑2 ϫ 4͒ consist of two surface-core-level-shifted components. One of them is shifted about 0.2 eV to the lower kinetic energy from the bulk component. On the basis of the relative component intensities, this surface-shifted As 3d component is assigned to the emission from the first-layer As dimers in the established model of the ͑2 ϫ 4͒ surface. The other component, shifted about 0.3 eV to the higher kinetic energy, is connected to the third-layer As-dimer site. The comparison of the core-level results between GaAs͑100͒͑2 ϫ 4͒ and InAs͑100͒ ϫ͑2 ϫ 4͒ suggests that the ␣2 phase, which has one As dimer in both the first and third atomic layers per unit cell, exists on GaAs͑100͒͑2 ϫ 4͒, similarly to the case of InAs͑100͒͑2 ϫ 4͒, as predicted in theory but not observed to date. Furthermore, the STM observation of the GaAs͑100͒͑2 ϫ 4͒␣2 phase is reported.FIG. 1. Some atomic models with the cross sections for the III -V͑100͒͑2 ϫ 4͒ reconstruction: ͑a͒ ␤, ͑b͒ ␣, ͑c͒ ␤2, and ͑d͒ ␣2.PHYSICAL REVIEW B 72, 045321 ͑2005͒

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The structure of Sb-terminated GaAs(001) surfaces

Cited by 34 publications

References 21 publications

Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process

Electronic and structural properties ofGaAs(100)(2×4)and
Laukkanen
¹
,
Kuzmin
²
,
Perälä
³

et al. 2005
Phys. Rev. B
41
2
13
0
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The structure of Sb-terminated GaAs(001) surfaces

Cited by 34 publications

References 21 publications

Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

Sb-terminated InAs(001)-(2×4) and (2×8) studied using scanning tunneling microscopy and ab initio density functional theory

Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process

Electronic and structural properties ofGaAs(100)(2×4)andLaukkanen1, Kuzmin2, Perälä3 et al. 2005Phys. Rev. B412130View full textAdd to dashboardCite

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Electronic and structural properties ofGaAs(100)(2×4)and
Laukkanen
¹
,
Kuzmin
²
,
Perälä
³

et al. 2005
Phys. Rev. B
41
2
13
0
View full text Add to dashboard Cite