The structure of the Si (211) surface

Fulk, C.; Sivananthan, S.; Zavitz, Daniel H.; Singh, R.; Trenary, Michael; Chen, Y. P.; Brill, G.; Dhar, Nibir K.

doi:10.1007/s11664-006-0282-y

Cited by 15 publications

(7 citation statements)

References 23 publications

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“…A wide range of surfaces in vacuum are known to reconstruct, i.e., spontaneously rearrange the atom structure to lower the surface energy, 518 and thus it is natural to expect that NWs made out of the same material will also undergo reconstructions. The reconstruction can even determine the shape of the wire, for instance, the ͕112͖ surface of Si can reconstruct to a relatively low energy configuration 519,520 ͑see Fig. 78͒.…”

Section: Effects Of Irradiation On Nanowiresmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: Effects Of Irradiation On Nanowiresmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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“…Only recently, the attention has been drawn to higher index Si substrates, e.g., ͑211͒ and ͑311͒. 7 The combination of Si͑111͒ and Si͑001͒ surface bonding configurations in many high index substrates of ͑h11͒ type 8 can be useful for III-V materials growth as GaP and GaN. 9,10 On Si͑311͒ Tanikawa et al 11 have demonstrated the growth of polarization reduced GaN layers by structuring the substrates to form inclined Si͑111͒ planes on which c-axis oriented GaN is grown selectively.…”

mentioning

confidence: 99%

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Ravash

Bläsing

Hempel

et al. 2009

Applied Physics Letters

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We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18° inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of this layer is performed as c-axis oriented growth on the naturally occurring Si(111) planes of the Si(211) substrate. Cathodoluminescence measurements on a ∼1.2 μm thick structure reveals that it has a low concentration of basal plane stacking faults and no prismatic stacking fault luminescence.

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“…The third publication [10] involved an attempt to provide a more detailed analysis of the complex LEED pattern of the clean Si(211) surface. Although a structural model of clean Si(211) involving nanofacets was proposed by Baski, et al [6] on the basis of STM images, no attempt had previously been made to rationalize the LEED pattern in terms of the nanofaceted structural model.…”

Section: Resultsmentioning

confidence: 99%

Combinational Targeting of Prostate Carcinoma Cells and Tumors Associated Pericytes with Antibody Based Immunotherapy and Metronomic Chemotherapy

Ferrone¹,

Foster²,

Moser³

2008

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. The goal of this project was to obtain an atomic-scale understanding of the surface processes that underlie the growth by molecular beam epitaxy (MBE) of HgCdTe on As-passivated Si surfaces. It is generally recognized that in MBE the first few monolayers determine the quality and structure of the final crystalline film. In principle, the methods of surface science can provide the critically needed information about the initial stages of film growth. However, because of the volatile and toxic nature of As and CdTe, special equipment had to be constructed before the deposition processes could be studied. The resulting unique apparatus allowed us to deposit As and CdTe onto Si substrates in a separate preparation chamber with Final Report for "Surface Structure and Chemistry in the Epitaxial Growth of Cadmium Telluride on Silicon", DAAD19-0202-0029Report Title ABSTRACTThe goal of this project was to obtain an atomic-scale understanding of the surface processes that underlie the growth by molecular beam epitaxy (MBE) of HgCdTe on As-passivated Si surfaces. It is generally recognized that in MBE the first few monolayers determine the quality and structure of the final crystalline film. In principle, the methods of surface science can provide the critically needed information about the initial stages of film growth. However, because of the volatile and toxic nature of As and CdTe, special equipment had to be constructed before the deposition processes could be studied. The resulting unique apparatus allowed us to deposit As and CdTe onto Si substrates in a separate preparation chamber with subsequent transfer under vacuum into the main analysis chamber. We used the apparatus to characterize As on several different Si surfaces with the techniques of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and Low Energy Electron Diffraction (LEED). The surface analyses were performed with instrumentation that was nearly twenty years old, which slowed progress due to the need for frequent and difficult repairs. Unanticipated budget cuts also impeded progress. Nevertheless, several conference presentations and publications resulted from this work.

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The structure of the Si (211) surface

Cited by 15 publications

References 23 publications

Ion and electron irradiation-induced effects in nanostructured materials

Ion and electron irradiation-induced effects in nanostructured materials

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Combinational Targeting of Prostate Carcinoma Cells and Tumors Associated Pericytes with Antibody Based Immunotherapy and Metronomic Chemotherapy

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