Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Abstract

We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18° inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of this layer is performed as c-axis oriented growth on the naturally occurring Si(111) planes of the Si(211) substrate. Cathodoluminescence measurements on a ∼1.2 μm thick structure reveals that it has a low concentration of basal plane stacking faults and no prismatic stacking fault luminescence.

Impact of AlN seeding layer growth rate in MOVPE growth of semi‐polar gallium nitride structures on high index silicon

“…That means that the crystallite orientation of GaN grown on a thin AlN seeding layer with high TMAl-flow rate depends on the Si substrate orientation. Single crystalline GaN with a continuous layer on Si(112) was grown applying a thin AlN seeding layer ($4 nm) with high TMAl-flow rate [13], whereas with the same growth parameters four components GaN was grown on Si(117).…”

“…[13]), which correlates with the angle between Si(112) and (111) ($19.48). The orientation distribution of the GaN crystallites grown on Si(117) shows four components having tilt-angles of $478, one of which is dominant with a higher intensity in comparison to the other maxima.…”

Epitaxial lateral overgrowth of non-polar GaN(11̄00) on Si(112) patterned substrates by MOCVD

“…In all these cases, the growth must be initiated on the Si{1 1 1} facets, which requires patterning of Si substrate to expose the {1 1 1} facets and allow only certain facets to participate in the growth. Ravash et al [19] have demonstrated the MOCVD growth of semipolar GaN on a planar Si(1 1 2) substrate, with the GaN film surface close to (1 0 À1 6). In this case, GaN preferentially grows with c-axis orientation on the Si(1 1 1) planes which, together with the Si(0 0 1) steps, are naturally occurring facets on the Si(2 1 1) surface.…”

Eliminating stacking faults in semi-polar GaN by AlN interlayers

“…5), or Si. [6][7][8] In wurtzite-type, group-III nitrides stacking faults can be regarded as a cubic inclusion in the hexagonal matrix. Although cubic group-III-nitrides lack strong piezoelectric fields, this has a negative impact on the GaN properties.…”