We present metal organic vapor phase epitaxy growth of polarization reduced, single component GaN on nonpatterned Si(112), Si(113), Si(114), Si(115), and Si(116) substrates. We find that the inclination angle of GaN c-axis with respect to the surface normal depends on the angle between Si(111) and above mentioned Si(11h)-surfaces. The growth of the GaN layer is essentially performed as c-axis oriented growth on the naturally occurring Si(111) facets of these Si(11h)-surfaces. The c-axis tilt-angle of GaN crystallites depends on the Si-surface direction and increases from Si(112) to Si(116) planes. GaN layers are investigated by x-ray analysis and scanning electron microscopy.

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Aqueous chemical growth (ACG) is an efficient way to generate wafer-scale and densely packed arrays of ZnO nanopillars on various substrate materials. ACG is a low-temperature growth approach that is only weakly influenced by the substrate and even allows growth on flexible polymer substrates or on conducting materials. The advanced fabrication of wafer-scale and highly vertically aligned arrays of ZnO nanopillars on various substrate materials is demonstrated. Moreover, it is possible to control the morphology in diameter and length by changing the growth conditions. Photoluminescence characterization clearly shows a comparatively strong band-edge luminescence, even at room temperature, that is accompanied by a rather weak visible luminescence in the yellow/orange spectral range.

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Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxyInfluence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy