The structure, properties, and dynamics of oxygen vacancies in amorphous SiO/sub 2/

Computational Design of Silicon Suboxides: Chemical and Mechanical Forces on the Atomic Scale

“…This range of values is comparable to findings for Si-Si bond formation at V O sites in α-quartz (see [42] and references cited therein), and consistent with neutral vacancy sites [43]. As can be seen from Table 4, the defects are thermodynamically more stable near the Si substrate for both 2D single and 3D double interface models.…”

High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

“…Some fraction of the charge accumulated at the traps during the irradiation leaked out in the first several minutes. We found that measurements done at one to several hours after irradiation were repeatable, which is the signature of charge localized in deeper traps (for available levels see, e.g., [15]). The calculated differences between the -curves of the erase-write legs of the first and second cycle for different doses are shown in Fig.…”

Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

“…For the paramagnetic probe states involved in the single-spin detection concept, we suggest using a silicon dangling bond state in the amorphous SiO 2 network, (so called E' γ center) as it exhibits many properties needed for the single spin detection concept described in this study (24,26]: 1) the E' γ center is highly localized (few Angstroms) [28], providing a localization range needed for atomic-scale spatial resolution. 2) SiO 2 is a good dielectric due to its large band gap.…”

“…2) SiO 2 is a good dielectric due to its large band gap. The E' γ center is energetically rather deep in the gap [28], so that an electron injected into the defect can remain there for a long time. 3) SiO 2 films can be easily grown on standard silicon AFM tips by thermal oxidation.…”

“…a silicon dangling bond. The electronic structure of the dangling bonds associated with oxygen vacancies have been calculated by several groups [28,37]. In this work, the E' γ center is taken as a prototypical paramagnetic defect for the simulations of the proposed single electron spin detection method.…”