The study of lattice defects by channelling

Swanson, M. L.

doi:10.1088/0034-4885/45/1/002

Cited by 57 publications

(18 citation statements)

References 74 publications

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“…One direct method to prove that the partial relaxation takes place in such a way consists in the analysis of the channeling effect along different crystallographic axes. The underlying idea is that the oblique crystallographic axes of strained layers suffer a significant and measurable deviation with respect to the axes of relaxed films [25] . This fact is a consequence of the geometrical relations between the lattice parameters of the film and the position of its major crystallographic axes.…”

Section: Resultsmentioning

confidence: 99%

On the origin of strain relaxation in epitaxial CdZnO layers

Redondo-Cubero¹,

Rodrigues

Brandt

et al. 2013

Oxide-Based Materials and Devices IV

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The origin of a double peak, detected by X-ray diffraction (XRD), in a wurtzite Cd x Zn 1-x O (x=0.17) epilayer, is investigated using Rutherford backscattering spectrometry in channeling geometry (RBS/C). In-depth compositional characterization by RBS/C demonstrates that strain relaxation does not take place via compositional phase separation and does not cause any compositional pulling effects. On the contrary, RBS/C angular scans demonstrate that relaxation is a consequence of progressive structural changes during the heteroepitaxial growth of the film on MgZnO, likely due to the large distortion of the lattice induced by the high Cd content.

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Section: Resultsmentioning

confidence: 99%

On the origin of strain relaxation in epitaxial CdZnO layers

Redondo-Cubero¹,

Rodrigues

Brandt

et al. 2013

Oxide-Based Materials and Devices IV

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“…In the > < 113 2 direction the position depends on both a and c lattice parameters since in wz crystals the angle θ between the <0001> and the > < 113 2 axes verifies tanθ=a/c (θ=31.97º for wz-ZnO). Thus, for pseudomorphic growth any variation in the angular position for the channel reflects a change in the tetragonal strain of the film [31] that can be tracked for different depth windows. Since the absolute values for θ can be affected by inaccuracies in the goniometer, the usual way to determine the strain is the measure of relative shifts between layers [23,32] .…”

Section: Discussionmentioning

confidence: 99%

Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers

Redondo-Cubero¹,

Brandt

Henneberger

et al. 2012

SPIE Proceedings

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In this paper we show the application of Rutherford backscattering spectrometry and ion channeling (RBS/C) for the detection of compositional and strain gradients in CdZnO grown almost pseudomorphically on MgZnO. The asymmetric features revealed in X-ray diffraction studies were explained by the compositional gradient found in the first 100 nm close to the interface. Calculations of the effect of such a gradient on the strain state of the layer were developed and contrasted with RBS/C angular scans. Additionally, the substitutional behavior of Cd (and Mg) in Zn-sites was demonstrated.

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“…The positions of solute atoms in a crystal can be determined by comparing normalized backscattered yields X , from solute atoms and X , from host atoms at the same depth z for various axial and planar channels (4,(32)(33)(34). For angular scans through such channels, the yields X , have characteristic profiles, depending on the projected positions of the solute atoms in the channels.…”

Section: Discussionmentioning

confidence: 99%

A channeling study of vacancy – solute atom complexes in irradiated aluminum crystals

Swanson¹,

Howe²,

Moore³

et al. 1984

Can. J. Phys.

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The irradiation-induced evolution of vacancy -solute atom complexes in AI-Sn and Al-In crystals was studied by ion channeling. The backscattering yields from host and solute atoms-near the (loo), (1 10). (21 I), and (1 11) channels h e r e measured in these alloys to determine the positions of the solute atoms in the lattice. During annealing near 200 K following 4He' irradiation at 35 K, thc solute atoms trapped vacancies, thus becoming displaced from substitutional lattice sites into the characteristic interstitial positions (113. 116, 1/6)ao, (114, 114, 1/4)ao. and (112. 112, 1/2)a,, surroundcd by thrcc. four, and six vacancies, respectively. Subsequent irradiation at 70 K reduced the size of thcse vacancy clusters. Thc evolution and the decay of these vacancy -solute atom complexes were measured quantitatively during irradiation and annealing. On a ktudik, en utilisant la canalisation d'ions, I'Cvolution, induite par irradiation, des complexes lacunes-atomes dissous dans des cristaux AI-Sn et Al-In. On a mesurk la rktrodiffusion par les atomes du milieu hBte et par les atomes dissous, au voisinage des canaux (loo), (I lo), (21 1) et (I I I) dans ces alliages, afin de determiner les positions dans le rescau des atomes dissous. Durant le recuit au voisinage de 200 K. aprts irradiation par 4He' i 35 K , les atomes dissous capturcnt des lacunes, ce qui les dkplace de leurs positions de substitution dans le rkseau vers les positions interstiticlles caractkristiques (113, 116, 1/6)orl, (114, 114, 1/4)a0 et (112, 112. 112)ao, ou ils sont cntoures par trois, quatre et six lacunes, rcspectivement.Une irradiation subsequente i 70 K reduit la grosseur de ces amas lacunaires. L'Cvolution et la desintegration dc ces complexes lacunes-atome dissous ont fait I'objet dc mcsures quantitatives durant I'irradiation ct le recuit.[Traduit par le journal]Can. J. Phys. 62. 826 (1984)

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The study of lattice defects by channelling

Cited by 57 publications

References 74 publications

On the origin of strain relaxation in epitaxial CdZnO layers

On the origin of strain relaxation in epitaxial CdZnO layers

Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers

A channeling study of vacancy – solute atom complexes in irradiated aluminum crystals

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