The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

High-resolution x-ray diffraction investigations of He-implanted GaAs

“…In the model no modification of the Debye-Waller factor in different parts of the profile was considered, assuming the whole implanted region to be crystalline. This assumption is supported by the finding in [6,16] that even at very high doses no amorphous layers were observed within the implanted region. According to [17] the critical dose of amorphization of GaAs by He implantation is equal to 3 × 10 16 cm −2 and is thus one order of magnitude higher than the doses used in this study.…”

“…In a previous work [8] a linear dependence of mismatch on dose was found for Si + implantation at 300 keV into GaAs at very low doses (<1 × 10 13 cm −2 ). For 100 keV H + implantation at very high doses (>10 16 cm −2 ) [6] it was shown that there is only a marginal influence of the dose on rocking curve shape and mismatch (from a/a = 2.1 × 10 −3 for 1 × 10 16 cm −2 to 3.2 × 10 −3 for 1 × 10 18 cm −2 ).…”

“…In contrast to the situation for Si in the field of GaAs only a limited number of publications exist concerning combined implantation/HRXRD investigations (see e.g. [6][7][8][9][10][11]).…”

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

“…High-resolution X-ray diffraction (HRXRD) method in double-or triple-axis modes is widely used in a characterization of a strain status of the exfoliating implanted layer of III-V materials (for instance, [9][10][11]). Analysis of reciprocal space maps (RSMs) allows to reveal some characteristic features of scattered intensity distribution around a reciprocal lattice point (RLP) of the exfoliating implanted layer [12].…”