The Sub-Micron Hole Array in Sapphire Produced by Inductively-Coupled Plasma Reactive Ion Etching

Shiao, Ming‐Hua; Chang, Cheng-Chi; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen–Jeng; Ma, Kai-Tung; Chiang, Donyau

doi:10.1166/jnn.2012.4694

Cited by 5 publications

(3 citation statements)

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“…Most of the recent sapphire etching technology has been developed for producing patterned sapphire substrates (PSS) for the growth of GaN layers to fabricate light emitting diodes (LEDs), where the pattern feature depths were in the submicrometer and nanometer range [22][23][24][25][26][27][28][29][30][31][32][33] and the sidewall profiles were not vertical. To our knowledge, no study has been performed for nominal 100 µm deep etching and vertical sidewall profiles using the sapphire inductively coupled plasma (ICP) etching process.…”

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confidence: 99%

“…Finally, for a 90 nm thick Cr etching mask on a sapphire wafer etched at a bias power of 150 W, the resulting sapphire etch rate was 108 nm min −1 , the selectivity was 3.1 and the sidewall profile external angle was 110°. Shiao et al [33] used a 100 nm thick Cr etching mask on a sapphire wafer in a BCl 3 /Ar gas mixture. The diameter of the etched sapphire pattern, depth of comb hole array and sidewall profile angle were 400 nm, 200 nm and 80°, respectively.…”

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Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

Chen

Lin

Mikolas

et al. 2014

J. Micromech. Microeng.

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To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

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Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

Chen

Lin

Mikolas

et al. 2014

J. Micromech. Microeng.

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“…Ordered porous silicon can be produced by transferring a primary structure from photolithography, , nanoimprint or colloidal lithography, , laser interference lithography, or block copolymer lithography into an underlying substrate. Reactive ion etching (RIE) converts the two-dimensional (2D) pattern into three-dimensional pores but depends on the availability of RIE equipment, and it is costly.…”

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confidence: 99%

Dense Arrays of Uniform Submicron Pores in Silicon and Their Applications

Brodoceanu

Elnathan

Prieto‐Simón

et al. 2015

ACS Appl. Mater. Interfaces

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We report a versatile particle-based route to dense arrays of parallel submicron pores with high aspect ratio in silicon and explore the application of these arrays in sensors, optics, and polymer micropatterning. Polystyrene (PS) spheres are convectively assembled on gold-coated silicon wafers and sputter-etched, resulting in well-defined gold disc arrays with excellent long-range order. The gold discs act as catalysts in metal-assisted chemical etching, yielding uniform pores with straight walls, flat bottoms, and high aspect ratio. The resulting pore arrays can be used as robust antireflective surfaces, in biosensing applications, and as templates for polymer replica molding.

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Atomic Layer Deposition Assisted Pattern Multiplication of Block Copolymer Lithography for 5 nm Scale Nanopatterning

Moon

Kim

Jin

et al. 2014

Adv Funct Materials

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5-nm-scale line and hole patterning is demonstrated by synergistic integration of block copolymer (BCP) lithography with atomic layer deposition (ALD).While directed self-assembly of BCPs generates highly ordered line array or hexagonal dot array with the pattern periodicity of 28 nm and the minimum feature size of 14 nm, pattern density multiplication employing ALD successfully reduces the pattern periodicity down to 14 nm and minimum feature size down to 5 nm. Self-limiting ALD process enable the low temperature, conformal deposition of 5 nm thick spacer layer directly at the surface of organic BCP patterns. This ALD assisted pattern multiplication addresses the intrinsic thermodynamic limitations of low χ BCPs for sub-10-nm scale downscaling. Moreover, this approach offers a general strategy for scalable ultrafi ne nanopatterning without burden for multiple overlay control and high cost lithographic tools.

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The Sub-Micron Hole Array in Sapphire Produced by Inductively-Coupled Plasma Reactive Ion Etching

Cited by 5 publications

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Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

Dense Arrays of Uniform Submicron Pores in Silicon and Their Applications

Atomic Layer Deposition Assisted Pattern Multiplication of Block Copolymer Lithography for 5 nm Scale Nanopatterning

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