2020
DOI: 10.1016/j.jmmm.2020.166689
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The submicron garnet film with perpendicular magnetic anisotropy prepared by liquid phase epitaxy method

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Cited by 6 publications
(4 citation statements)
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“…Magnetic anisotropy is a key characteristic of magnetic materials and plays an important role in various applications, such as spin electronic devices [1][2][3][4], microelectromechanical systems [5], magnetic nanosensors [6], magnetic storage [7], and magnetic recording [8,9]. In magnetic films, the easy magnetization direction is often preferentially oriented within the plane, making it difficult to obtain films with perpendicular magnetic anisotropy, which severely limits the development of high-performance functional devices [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Magnetic anisotropy is a key characteristic of magnetic materials and plays an important role in various applications, such as spin electronic devices [1][2][3][4], microelectromechanical systems [5], magnetic nanosensors [6], magnetic storage [7], and magnetic recording [8,9]. In magnetic films, the easy magnetization direction is often preferentially oriented within the plane, making it difficult to obtain films with perpendicular magnetic anisotropy, which severely limits the development of high-performance functional devices [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…A material of choice for complex SW conduits is yttrium iron garnet (YIG) in the single-crystal phase [8]. The growth of ultra-low damping YIG films has been optimized in the last decade [9][10][11][12] and the development of garnet layers is ongoing [13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Hitherto, state-of-art YIG films provide high relaxation times of hundreds of nanoseconds corresponding to millimeterscale SW decay length [27][28][29].…”
Section: Introductionmentioning
confidence: 99%
“…For example, deposition parameters that have been the foci of optimization studies include the choice of substrate (Hylton et al, 1993), substrate temperature (Xu et al, 2013a;Wei et al, 2020), working gas type and pressure , postdeposition annealing (Borisov et al, 2013), laser process conditions (Yu et al, 2020), and film thickness (Sun et al, 2016). Several common deposition techniques are available to obtain hexaferrite films of various crystallographic quality, including sol-gel , molecular beam epitaxy (MBE) (Liu et al, 2010), liquid phase epitaxy (LPE) (Kranov et al, 2006;Wu et al, 2020), screen printing (Chen et al, 2006), radio frequency (RF) magnetron sputtering (Zhang et al, 2010;Xu et al, 2013a;Patel et al, 2018;Abuzir et al, 2020), direct current (DC) magnetron sputtering (Zhang et al, 2014;Zhang et al, 2019), spin-coating (Meng et al, 2014a;Meng et al, 2014b), and pulsed laser deposition (PLD) (Eason, 2007). The last method has been found to be a more effective technique than other reported methods for the deposition of oxide, nitride, and carbide thin films (Eason, 2007;Wei et al, 2016).…”
Section: Introductionmentioning
confidence: 99%