1987
DOI: 10.1016/s0039-6028(87)80550-2
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The surface morphology of a growing crystal studied by thermal energy atom scattering (TEAS)

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Cited by 126 publications
(54 citation statements)
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“…Cu(100) 0.505 0.48 [17] 0.40 [45] 0.28±0.06 [40] 0.39±0.06 [36] 0.36±0.06 [41] 0.44 [20] 0.52±0.05 [46] 0.48 [27] 0.44 [25] 0.38 [37]-AFW 0.53 [37]-VC 0.51 [19] 0.43 [47] 0.49 [42] 0.53 [26] 0.79 P2Cu(100)/with-up-step/[away from the step] 0.483 P3Cu(100)/with-up-step/[over the step] 0.79 0.77 [27,26] 0.51 P4Cu(100)/with-up-step/[along the step] 0.499 P5Cu(100)/with-down-step/[away from the step] 0.847 0.84 [27] 0.83 [42] P6Cu(100)/with-down-step/[along the step] 0.265 0.25 [27] 0.26 [42] P7Cu(110)/[along open channel] 0.230 0.24 [ 27] 0.25 [25] 0.23 [37]-AFW 0.28 [37]-VC 0.23 [26] 0.87 P8Cu(110)/[perpendicular to the open channel] 1.146 1.15 [27] P9Cu ( 8.7x10…”
Section: P1mentioning
confidence: 99%
“…Cu(100) 0.505 0.48 [17] 0.40 [45] 0.28±0.06 [40] 0.39±0.06 [36] 0.36±0.06 [41] 0.44 [20] 0.52±0.05 [46] 0.48 [27] 0.44 [25] 0.38 [37]-AFW 0.53 [37]-VC 0.51 [19] 0.43 [47] 0.49 [42] 0.53 [26] 0.79 P2Cu(100)/with-up-step/[away from the step] 0.483 P3Cu(100)/with-up-step/[over the step] 0.79 0.77 [27,26] 0.51 P4Cu(100)/with-up-step/[along the step] 0.499 P5Cu(100)/with-down-step/[away from the step] 0.847 0.84 [27] 0.83 [42] P6Cu(100)/with-down-step/[along the step] 0.265 0.25 [27] 0.26 [42] P7Cu(110)/[along open channel] 0.230 0.24 [ 27] 0.25 [25] 0.23 [37]-AFW 0.28 [37]-VC 0.23 [26] 0.87 P8Cu(110)/[perpendicular to the open channel] 1.146 1.15 [27] P9Cu ( 8.7x10…”
Section: P1mentioning
confidence: 99%
“…0X36 AE 0X03 [95] SPA-LEED Island distances at 0.3 ML 0.43 [46] MD-N-Body-Pot. 0.43 [168] MD-CEM 0.43 [176] EMT 0X39 AE 0X06 [167] LEIS Diffusion onset at 140 AE 5 K 0.38a0.53 [177] EAM: AFWaVC Potentials 0.40 [166] He-scattering Stationary step densities 0.45 [178] EAM AgaAg(1 0 0) 0X40 AE 0X05 [170] LEIS-TOF Diffusion onset at 160 AE 5 K 0X50 AE 0X03 [179] ab initio FP-LMTO 0X330 AE 0X005 [87] STM n x at 295±370 K, i ! 1 0X25 AE 0X02 [45] MDaMC-CEM 0.48 [180] MD-EAM 0.365 [114] EMT 0.48 [177] EAM [183] EM for Ag on n x TY i ) 1 since T b 450 K 0.081 [158] ab initio DFT-LDA 2 ML AgaW(1 1 0) 0X051 AE 0X024 [184] He-scattering n x T, subsequent ann.…”
Section: Energy Barriers and Attempt Frequencies From Nucleation Densmentioning
confidence: 99%
“…Within the conventional picture of homoepitaxial growth, this 3D behaviour is attributed to a lack of thermal mobility of the adatoms; see e.g. [7][8][9] and references therein.…”
Section: Pacsmentioning
confidence: 99%
“…TEAS is rapidly becoming a powerful tool to characterize the surface morphology and to distinguish the various modes of removal and/or growth [7,8,13,[15][16][17][18][19][20][21]. The aim of this section is to outline briefly the basic principles.…”
Section: Analytical Proceduresmentioning
confidence: 99%