How would you……describe the overall significance of this paper? This paper signifies the structureproperty correlations and switching characteristics in vanadium dioxide (VO 2 ) and the importance of defect mediation. In VO 2 system, we can control the magnetic properties in a rather systematic way by manipulating growth parameters especially the oxygen partial pressure during growth and post-growth annealing. We have discovered that, the room temperature ferromagnetism in undoped vanadium oxide epitaxial films can be switched 'on' and 'off' by altering the cooling ambient conditions. …describe this work to a materials science and engineering professional with no experience in your technical specialty? Vanadium dioxide (VO 2 ) is an interesting class of electronic materials system which has the potential for viable device applications such as smart windows and low power bolometers, owing to its near room-temperature semiconductor-to-metal transition. It was found that the ferromagnetism of VO 2 films grown on c-sapphire can be switched off when grown and cooled in oxygen pressures of 10 -2 Torr establishing clearly that the ferromagnetism in VO 2 system is directly driven by the stoichiometry of defects. .
…describe this work to a layperson?Vanadium dioxide (VO 2 ) is an electronic material that undergoes an ultrafast semiconductor-to-metal transition near room temperature. The post growth cooling-cycle ambient parameters have a direct bearing on the physical properties of VO 2 films. The most interesting and new exciting feature is that the ferromagnetism of the epitaxial VO 2 films can be switched 'on' and 'off' by altering the cooling ambient conditions. Vanadium dioxide (VO 2 ) has tremendous potential in multifunctional device applications related to spintronics, switching, and magnetic recording. We have discovered that the room temperature ferromagnetism (RTFM) in undoped vanadium oxide epitaxial films can be switched on and off by altering the cooling ambient conditions which exhibit a sharp electrical transition at 341 K. By correlating the structural and ferromagnetic properties in VO 2 , we envisage the potential for creation of novel multifunctional solid-state devices. High-quality epitaxial VO 2 thin films were grown on c-sapphire (0001) substrates, under different ambient conditions via the domain matching epitaxy paradigm. The observed RTFM has its origin in the valence charge defects with unpaired electrons in V +3 in VO 2 thin films, where the concentration of the defects could be varied with oxygen partial pressure. The VO 2 films-with a high ferro-to paramagnetic transition (Curie) temperature around 500 K estimated by fitting the magnetization data to the Bloch's T 3/2 law, a saturated magnetization of 18 emu/cm 3 , and with a finite coercivity of 40 Oe at 300 K-can be useful for integrated smart sensors operable at room temperature.