The synthesis and optical properties of GaSe/InSe core/shell nanoparticles

Yang, Shuming; Wang, Hongjun; Fu, Wenhong; Kelley, David F.

doi:10.1016/j.jphotochem.2007.05.017

Cited by 6 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence, PbS films grown on GaSe layers and the Se atoms at the surface are expected to bond via van der Waals interaction. The lattice parameters in these kinds of van der Waals heterojunctions may allow the formation of different junctions depending on the compatibility of the bonding natures in lattices [28][29][30]. In the present work, PbS films were grown on GaSe crystal substrate by CBD, and the structural, morphological, optical, and electrical properties of the films were investigated.…”

Section: Pbmentioning

confidence: 99%

Properties of PbS thin films grown on glass and layered GaSe crystal substrates by chemical bath deposition

Karabulut¹,

Ertap²,

Mammadov³

et al. 2014

Turk J Phys

View full text Add to dashboard Cite

PbS thin films were grown on glass and GaSe crystal substrates by chemical bath deposition and their structural, morphological, optical, and electrical properties were investigated. PbS films grew in cubic structure with lattice constants equal to 5.9315Å and 5.9362Å for films grown on glass and GaSe crystal, respectively. The band gaps of the PbS films were determined to be 1.60 eV. The long wavelength tails of absorption spectra showed exponential dependence on the incident photon energy according to the Urbach-Martiensen model. Electrical properties of PbS films were investigated by the van der Pauw method, which showed that PbS films were p and n type depending on the temperature. At low temperatures, the p-type conductivities of PbS thin films grown on glass and GaSe substrates were found to be due to the ionization of acceptor centers with energies of 94.50 meV and 36.50 meV, respectively, while at higher temperatures the n-type conductivities were found to be determined by the ionization of donor centers with energies of 226.50 meV and 310 meV, respectively. The sheet charge carrier concentration and mobility of PbS film grown on GaSe substrate were, in general, higher than those of films grown on glass substrate.

show abstract

Section: Pbmentioning

confidence: 99%

Properties of PbS thin films grown on glass and layered GaSe crystal substrates by chemical bath deposition

Karabulut¹,

Ertap²,

Mammadov³

et al. 2014

Turk J Phys

View full text Add to dashboard Cite

show abstract

“…Ionothermal, microwave-assisted synthesis of indium(III) selenide Introduction Indium(III) selenide is a black crystalline n-type, III-VI layered semiconductor with a direct band gap of 1.7 eV. 1 The band gaps of III-VI layered semiconductors are generally narrow at room temperature, which makes them attractive compounds for solar energy conversion and optoelectronic devices 2,3 and therefore, have potential in solar energy conversion applications. 4 To date they have been studied as precursors to copper indium selenide, CIS, as an optical recording medium, a polarizer for optoelectronics and in Li-collated form for battery applications.…”

mentioning

confidence: 99%

Ionothermal, microwave-assisted synthesis of indium(iii) selenide

2014

View full text Add to dashboard Cite

Microcrystalline indium(III) selenide was prepared from a diphenyl diselenide precursor and a range of chloroindate(III) ionic liquids via a microwave-assisted ionothermal route; this is the first report on the use of either microwave irradiation or ionic liquids to prepare this material. The influence of the reaction temperature, dilution with a spectator ionic liquid and variation of the cation and the anion of the ionic liquid on the product morphology and composition were investigated. This resulted in a time-efficient and facile one-pot reaction to produce microcrystalline indium(III) selenide. The product formation in the ionic liquids has been monitored using Raman spectroscopy. The products have been characterised using PXRD, SEM and EDX. Advantages of this new route, such as the ease of solubilisation of all reactants into one phase at high concentration, the negligible vapour pressure irrespective of the reaction temperature, very fast reaction times, ease of potential scale-up and reproducibility are discussed.

show abstract