The synthesis mechanism of complex oxide films formed in dense RF — plasma by reactive sputtering of stoichiometric targets

Мухортов, В. М.; Golovko, Yu. I.; Tolmachev, G. N.; Klevtzov, A. N.

doi:10.1080/00150190008214943

Cited by 66 publications

(18 citation statements)

References 4 publications

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“…The RF deposition of complex oxide films under a high pressure of working gas ͑oxygen͒ yields films with high crystallinity. 14 The orientation, lattice constants and epitaxial nature of the films were determined by X-ray diffraction ͑XRD͒ ⌰/2⌰ and scans. ⌰-2⌰ XRD a͒ Author to whom correspondence should be addressed; e-mail Elenaគmishina@mail.ru scans revealed only ͑001͒ ͑and traces of ͑100͒ for the thinnest film͒ type reflections and no evidence of second-phase nucleation for all of our films.…”

Section: A Film Fabrication and Structural Characterizationmentioning

confidence: 99%

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Domain orientation in ultrathin (Ba,Sr)TiO3 films measured by optical second harmonic generation

Мишина

Sherstyuk

Barskiy

et al. 2003

Journal of Applied Physics

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The analysis of polarization diagrams for specular and scattered second harmonic generation ͑SHG͒ was used for the structural characterization of submicron domain structures of thin (Ba,Sr͒TiO 3 ͑BST͒ films. It is shown that the lack of separation of these two contributions may lead to completely wrong conclusions about the domain orientation in these films. SHG studies of the thickness dependence of domain fractions ͑including 180°domains͒ reveal the presence of ferroelectric domains in ultrathin BST films ͑6 nm͒, although no domain structure was observed by atomic force microscopy. Thus the presence of ferroelectric ordering was demonstrated in perovskite films with a thickness down to 6 nm.

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Section: A Film Fabrication and Structural Characterizationmentioning

confidence: 99%

“…[7][8][9] . Following this, Gopalan et al 10 and Barad et al 11,12 demonstrated the use of polarization diagrams to investigate the domain structures in KnbO 3 and B 14 Ti 3 O 12 .…”

Section: Introductionmentioning

confidence: 99%

Domain orientation in ultrathin (Ba,Sr)TiO3 films measured by optical second harmonic generation

Мишина

Sherstyuk

Barskiy

et al. 2003

Journal of Applied Physics

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“…The layered growth mechanism with an atomically smooth surface was confirmed by the electron microscopy and atomic force microscopy studies of the film surface. This technique of the dep osition of complex oxide films with the perovskite structure was described in more detail in [11][12][13]. During the BST film growth, the substrate tempera ture was maintained equal to 680°C.…”

Section: Sample Preparation and Experimental Techniquementioning

confidence: 99%

“…To process the experimental strains, expression (10) should be averaged as (11) where the notations ν = exp and ξ = are introduced. In expression (11), constants P 0 and P ∞ are unknown.…”

Section: Double Electric Layermentioning

confidence: 99%

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

et al. 2015

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Heteroepitaxial Ba x Sr 1 -x TiO 3 thin films of different thicknesses have been studied in the paraelectric phase at a temperature of 600°C. The lattice parameters of the film have nonlinear dependence on the thickness. The misfit strain and unit cell volume increase with decreasing thickness. The behavior of the misfit strain with variations in the thickness is well described in the model of the double electric layer formed during the synthesis of the film at the interface with the substrate.

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“…Пленки сложных оксидов получают методами хими-ческого осаждения металлорганических соединений из газовой фазы (metalorganic chemical vapour depositions, MOCVD) [26,27], импульсного лазерного осаждения (pulsed laser deposition, PLD) [28], высокочастотного магнетронного распыления [29][30][31], гидротермальным методом [32], методами химического осаждения из рас-творов (chemical solution deposition, CSD), включая золь-гель метод [33,34], а также методами молекулярно-лучевой эпитаксии (MBE) [35].…”

Section: Introductionunclassified

Механизмы Поглощения Терагерцового И Инфракрасного Излучения В Пленках PZT

Komandin¹,

Porodinkov²,

Spektor³

et al. 2018

Физика Твердого Тела

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Измерены и проанализированы THz−IR-спектры диэлектрического отклика плотных и пористых пленок Pb(Zr,Ti)O 3 , осажденных на подложки из монокристаллических оксидов магния и алюминия, а также на крем-ниевые подложки с платиновым контактным слоем. Рассмотрены основные механизмы электродипольного поглощения, формирующие полосы в экспериментальных спектрах отражения и пропускания. Обсуждается зависимость параметров полос поглощения в пленках от типа подложки.Работа в МИРЭА выполнена при финансовой поддержке Минобрнауки России в рамках проектной части государственного задания в сфере научной деятельности, проект № 11.2259.2017/4.6; работа в ИОФ РАН выполнена при финансовой поддержке Российского фонда фундаментальных исследований, проект № 15-02-02335a.

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The synthesis mechanism of complex oxide films formed in dense RF — plasma by reactive sputtering of stoichiometric targets

Cited by 66 publications

References 4 publications

Domain orientation in ultrathin (Ba,Sr)TiO3 films measured by optical second harmonic generation

Domain orientation in ultrathin (Ba,Sr)TiO3 films measured by optical second harmonic generation

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

Механизмы Поглощения Терагерцового И Инфракрасного Излучения В Пленках PZT

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