The temperature dependence of the efficiency of an AlGaAs/GaAs solar cell operating at high concentration

Boettcher, R.J.; Borden, P.; Gregory, P. E.

doi:10.1109/edl.1981.25351

Cited by 10 publications

(1 citation statement)

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“…Yet, the main part of the publications in this field is focused on the experimental determination of IV-parameters, temperature coefficients and -more rarely -quantum efficiencies or on analytical modeling, e.g. [1][2][3][4][5][6][7][8][9][10][11]. In the meantime, several research groups have published sophisticated numerical models of III-V solar cells using semiconductor simulation environments, but in all these publications standard test conditions are assumed, e.g.…”

Section: Introductionmentioning

confidence: 99%

An experimental and theoretical study on the temperature dependence of GaAs solar cells

Philipps

Hoheisel

Gandy

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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In this paper the temperature-dependent behavior of GaAs single-junction solar cells is studied using both experimental and simulation tools. A cryostat is used to allow measurements of the external quantum efficiency (EQE) and IV curve at different temperatures with the corresponding experimental setup at Fraunhofer ISE. Two different GaAs single-junction solar cell structures are characterized in a wide temperature range between 203 K and 398 K. Through numerical modeling of the GaAs solar cells in a semiconductor simulation environment a deeper understanding of the cells' temperature-dependent behavior is obtained. A good correlation between measurement and simulation results is achieved

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