Room temperature giant electrocaloric properties of relaxor ferroelectric 0.93PMN-0.07PT thin film AIP Advances 3, 032115 (2013); 10.1063/1.4795156 Si, Be, and C ion implantation in GaAs0.93P0.07Photoluminescence measurements of tensilestrained GaAs/In0.07Al0.93As quantum wells

A silicon solar cell with over 19% efficiency at 100 suns, AM1.5, 20 °C, incorporating a novel front contact geometry, has been demonstrated. The cell has one third of its frontal area covered with metal and grid line spacing of 82 μ, as measured along the silicon surface. It uses V-groove etching, angle-contact metal evaporation, and a cover glass to allow high fractional grid coverage with low obscuration, thereby minimizing emitter resistance losses at high concentrations.

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A two-junction solar cell has been fabricated using an Al0.30Ga0.70As (1.82 eV) tap cell and a GaAs (1.43 eV) bottom cell. A processed metal interconnect is used to connect the two cells together in series. An efficiency of 21.5% at 980 mW/cm2 has been measured in a solar simulator with an open circuit voltage of 2.35 V, a short circuit current of 118.6 mA/cm2, and a fill factor of 0.76. An efficiency of 22% has been measured under 130 AM3 sun in a solar tracking concentrator. Organometallic vapor phase epitaxy is used to grow the entire nine-layer device.

Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.The Carrier Illumination™ ͑CI͒ method is an optical technique for nondestructive in-line monitoring of postanneal junction depth, preanneal preamorphization implant depth, and dose. This work intends to extend the use of the CI measurements from a relatively process specific quantitative measurement towards a more universal quantitative analysis of junction depth, profile abruptness, and implant dose. For that purpose the predictive capabilities of the present physical models with respect to the quantitative dependence of the CI signal on the applied generation power is investigated for a wide variety of samples, including bulk material, highly abrupt chemical vapor deposition grown ͑B͒ structures, and implanted ultrashallow junctions ͑B, BF 2 , As͒. In general, the CI signal may arise from a combination of three components: a primary one originating from the reflection of the probe laser beam from the dopant profile depth corresponding with the injected excess carrier level, in some cases, from reflection from near-surface carriers, and in other cases, from residual damage within the doped region.