High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnects

Ludowise, M. J.; LaRue, R.A.; Borden, P.; Gregory, P. E.; Dietze, W. T.

doi:10.1063/1.93592

Cited by 31 publications

(6 citation statements)

References 3 publications

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“…The proposed solar cell structure has three-terminals. Three- or more- terminal solar cell structures have been proposed in the past, but consisted either in a mechanical stack of single-gap solar cells 8 or included a doped semiconductor layer to interconnect the solar cells in a (n/p)–p–(n/p) 9 or (n/p)–p–(p/n) 10 configuration.…”

mentioning

confidence: 99%

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Martı́

Ĺuque

2015

Nat Commun

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Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

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confidence: 99%

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Martı́

Ĺuque

2015

Nat Commun

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“…The 3T-HBTSC design hybridizes optical aspects from MJSCs and electrical features from threeterminal devices in a monolithic configuration that resembles an n-p-n (p-n-p) BJT but does not perform as such. The three-terminal PV device concept is not new [4], although previous approaches were based on the mechanical stacking of single-junction solar cells [5] or on two independent p-n junctions separated by a highly doped layer [6]. The fundamental structure of this solar cell is exclusively based on the three aforementioned n-p-n (or equivalently, p-n-p) semiconductor layers.…”

Section: Fundamentals Of 3t-hbtscmentioning

confidence: 99%

Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells

Linares

Antolín

Martı́

2019

Solar Energy Materials and Solar Cells

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Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared with monolithically and series-connected tandem solar cells. In addition, the simplified n-p-n (or p-np) structure does not require the use of tunnel junctions. In this framework, four architectures are proposed and discussed in this paper: 1) one in which the top cell is based on silicon and the bottom cell is based on a heterojunction between silicon and III-V nanomaterials; 2) one in which the top cell is made of amorphous silicon and the bottom cell is made of an amorphous silicon-silicon heterojunction; 3) one based on the use of III-V semiconductors aimed at space applications; and 4) one in which the top cell is based on a perovskite material and the bottom cell is made of a perovskitesilicon heterostructure.

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“…The idea of multi-junction cells was suggested [7] and investigated [8] in the early days of photovoltaic technology. Significant progress was triggered by AlGaAs/GaAs tandem cells with tunnel junctions [9] and metal interconnections [10][11][12]. At that moment, it was predicted that the power-conversion efficiency of multi-junction solar cells would reach close to 30% [13], but this was not fulfilled due to difficulties in stable tunnel junctions [14] and defects in the AlGaAs [15].…”

Section: Introductionmentioning

confidence: 99%

The Outdoor Field Test and Energy Yield Model of the Four-Terminal on Si Tandem PV Module

et al. 2020

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The outdoor field test of the 4-terminal on Si tandem photovoltaic module (specifically, InGaP/GaAs on Si) was investigated and a performance model, considering spectrum change affected by fluctuation of atmospheric parameters, was developed and validated. The 4-terminal on Si tandem photovoltaic module had about 40% advantage in seasonal performance loss compared with standard InGaP/GaAs/InGaAs 2-terminal tandem photovoltaic module. This advantage increases (subarctic zone < temperate zone < subtropical zone). The developed and validated model used an all-climate spectrum model and considered fluctuation of atmospheric parameters. It can be applied every type of on-Si tandem solar cells.

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High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnects

Cited by 31 publications

References 3 publications

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells

The Outdoor Field Test and Energy Yield Model of the Four-Terminal on Si Tandem PV Module

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