The temperature dependence of the threshold current of GaInAsP/InP DH lasers

Asada, Masahiro; Adams, A.R.; Stubkjaer, K.E.; Suematsu, Y.; Itaya, Y.; Arai, Shigehisa

doi:10.1109/jqe.1981.1071158

Cited by 153 publications

(35 citation statements)

References 24 publications

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“…is the loss due to aperture scattering [43], refractive index fluctuation of the alloys [44], and surface roughness [45]. is due to free carrier [46] and intervalence band [47] absorptions. The optical efficiency, as defined by the ratio of photons collected by the detector and total emitted photons, is given by .…”

Section: B Optical Modelmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

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Section: B Optical Modelmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

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“…In these simulations, only the transverse confinement factor is considered, since the slab is assumed to be infinite in the horizontal (x) direction and the propagating field can be approximated to a plane wave. The laser threshold gain a th is given by [14] a th ¼ 1…”

Section: Confinement Factormentioning

confidence: 99%

Optimisation of distributed feedback laser biosensors

2007

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A new integrated optical sensor chip is proposed, based on a modified distributedfeedback (DFB) semiconductor laser. The semiconductor layers of different refractive indices that comprise a laser form the basis of a waveguide sensor, where changes in the refractive index of material at the surface are sensed via changes in the evanescent field of the lasing mode. In DFB lasers, laser oscillation occurs at the Bragg wavelength. Since this is sensitive to the effective refractive index of the optical mode, the emission wavelength is sensitive to the index of a sample on the waveguide surface. Hence, lasers are modelled as planar waveguides and the effective index of the fundamental transverse electric mode is calculated as a function of index and thickness of a thin surface layer using the beam propagation method. We find that an optimised structure has a thin upper cladding layer of 0.15 mm, which according to this model gives detection limits on test layer index and thickness resolution of 0.1 and 1.57 nm, respectively, a figure which may be further improved using two lasers in an interferometer-type configuration.

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“…Using (5) and (3) gives where Equation (6) indicates that the electron current density can be considered as the sum of the Auger hot electron current density J,, and the cool electron current density JnC. The electron leakage current densities are then given by the value of J,, evaluated at the p-P heterojunctions.…”

mentioning

confidence: 99%

Numerical drift‐diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes

Chai

McAlister

et al. 1994

Int J Numerical Modelling

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SUMMARYThis paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the conventional electron current continuity equation into two components, with one for the Auger hot electrons and the other for the low-energy electrons. These equations, which use the energy relaxation time parameter to model the dynamics of the Auger hot electrons, are then coupled with the hole current continuity equation and the Poisson equation to obtain self-consistent solutions. Results from the case studies of one-dimensional N-p-P InGaAsP/InP double heterojunction laser diodes with material composition corresponding to 1.3 pm and 1.55 pm wavelength emissions are presented. We have observed that hot electrons generated through Auger recombination inside the active region can spread into both the N-and the P-InP cladding layers.Within the drift-diffusion framework, it is demonstrated that the hot electron concentration in the N-InP cladding layer can be five orders of magnitude higher than that in the P-InP cladding layer. Because energy transport of the hot electrons is not modelled under the drift-diffusion approximation, the simulated results are discussed to highlight some of the possible limitations in using drift-diffusion physics to study Auger hot electron transport behaviour. The importance of taking energy transport into account is emphasized.

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The temperature dependence of the threshold current of GaInAsP/InP DH lasers

Cited by 153 publications

References 24 publications

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Optimisation of distributed feedback laser biosensors

Numerical drift‐diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes

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