The temperature hysteresis of the current–voltage characteristics of thin semiconducting films

Krempaský, J.; Červenák, J.; Dieška, Peter; Kubek, J.

doi:10.1002/pssa.2210060207

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…As overall the probability P(E) of tunneling an electron in an electric field with intensity E, the sum p(+E) + p(−E) = p(E) will be considered for the one-dimensional (1D) case, where the probabilities p(+E) and p(−E) are given by (39). This is quite similar in the absence of an electric field, with E = 0.…”

Section: Derivation Of Relations For Electroabsorptionmentioning

confidence: 99%

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An explanation of optical phenomena in non-crystalline semiconductors

Banik

2005

Open Physics

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Barrier model of a non-crystalline semiconductor is described in this article. The most important optical phenomena, which are typical for this group of materials, are explained on the base of this model. The model assumes that in non-crystalline semiconductors the potential barriers exist, which separate certain microscopic areas from each other, assuming barriers possess a parabolic profile. This conception explains the rise of exponential tails of optical absorption at the end of optical edge as well as electroabsorption, photoelectric conductivity, photoluminescence, and others. Using this model, many electric transport properties of non-crystalline semiconductors can be explained successfully.

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Section: Derivation Of Relations For Electroabsorptionmentioning

confidence: 99%

“…Certain model elements and concepts close to the described barrier model appear and are used in studies [33][34][35][36][37][38][39][40] in which problems of electric transport in amorphous semiconductors are solved by a method of relaxation constant.…”

Section: Notes On Electric Transport In Non-crystalline Semiconductorsmentioning

confidence: 99%

An explanation of optical phenomena in non-crystalline semiconductors

Banik

2005

Open Physics

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Switching effect in amorphous semiconductors at discontinuous changes in the heat transfer from the sample

Barančok

Dieška

Krempaský

1973

Phys. Stat. Sol. (a)

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The current–voltage characteristics of amorphous semiconductors of the Ovshinsky type are investigated both theoretically and experimentally at discontinuous changes in the coefficient of heat transfer from the sample surface. The theory based on the assumption that a thermal initiation of the switching mechanism provides a plausible explanation of the occurrence of a negative resistance area at different intensity of heat transfer as well as a good explanation of the abrupt changes in the current–voltage characteristics at discontinuous changes in the heat transfer conditions. This may be considered a clear proof of the initiation of the switching effect by an electrothermal mechanism. In the next phase the transition into the ON‐state takes place so rapidly that it cannot be influenced by a change in the heat cooling conditions. In terms of the theory presented also this transition phase may be interpreted as a jump from one current–voltage characteristic to another, caused by a sudden change in the activation energy of electrons by a kind of electronic mechanism. It is further tried to prove that the function of “virtual” electrodes in Kaplan's and Adler's theory may be performed by real electrodes, provided that a finite value of their thermal conductivity and a finite value of the coefficient of heat transfer into the environment is assumed.

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Some non-equilibrium phenomena in sputtered CdTe thin films

Valentovič

Červenák

Luby

et al. 1979

Phys. Stat. Sol. (a)

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Structure, photoconductivity, photovoltage, and trap distribution in cathode-sputtered polycrystalline thin CdTe films are investigated. It is shown that the structure of these films depends on the temperature of the substrate and on the voltage during sputtering. From thermally stirnulated depolarization current (TSDC) measurements following photopolarization and from thermally stimulated current (TSC) measurements the existence of a trap level a t 0.34 eV is deduced.Struktur, Photoleitung, Photospannung und Vorteilung von Einfangstellen in kathodenzerstaubten, polykristallinen CdTe-Schichten werden untersucht. Es wird gezeigt, dalj die Struktur dieser Schichten von der Temperatur der Unterlage nnd der wahrend der Zerstaubung angelegten Spannung abhangt. Aus Messungen von thermisch stimulierten Depolarisationsstromen (TSDC) nach vorheriger Photopolarisierung sowie von thermisch stiniulierteii Stromen (TSC) folgt die Existenz von Haf tstellen, die bei 0,34 eV liegen. Sample PreparationThe samples were deposited1) by cathode sputtering (two electrodes) of CdTe in an argon atmosphere onto glazed ceramic substrates. The sputtering target was polycrystalline CdTe. The vacuum before starting the sputtering was better than 6.5 x x lop4 Pa, the anode-cathode distance was 3 to 5 em and the applied voltage 4 kV. The Structure1) of CdTe FilmsCdTe belongs to the AIIBV1 group of semiconductors and is characterized by partly ionic, partly covalent chemical bonds [l].CdTe may crystallize in two basic crystallographic modifications : the cubic zincblende structure (a = 0.648 nm) and the hexagonal wurtzite structure ( a = 0.457 nni, c = 0.747 nm). Actual CdTe crystallites contain many types of structural defects and their combinations. Stacking faults may also be present within the crystallites which contain regions with zincblende and wurtzite structure, respectively. Sometimes polytypes are formed in which the stacking sequence of atoms is repeating periodically over longer distances than in the basic zincblende or wurtzite structures.Every of the above-mentioned structures is polar. This means that the crystallites have different properties along the [hkZ] and the [hki.Z] directions, respectively. CdTe thin films containing a mixture of these crystallographic modifications are composed of crystallites forming parallel layers of the individual crystallographic modifications ; between them there are heterojunctions (barriers).Preparation and structure investigation of the samples were performed in Bratislava.

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The temperature hysteresis of the current–voltage characteristics of thin semiconducting films

Cited by 4 publications

References 12 publications

An explanation of optical phenomena in non-crystalline semiconductors

An explanation of optical phenomena in non-crystalline semiconductors

Switching effect in amorphous semiconductors at discontinuous changes in the heat transfer from the sample

Some non-equilibrium phenomena in sputtered CdTe thin films

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