The thermal effect of GaN Schottky diode on its I–V characteristics

Chung, Se-Kyo; Hwang, Woong Joon; Lee, Chin C.; Shin, Moo-Whan

doi:10.1016/j.jcrysgro.2004.04.106

Cited by 9 publications

(7 citation statements)

References 16 publications

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“…At lower temperature, the phonon scattering is negligible and the only important mechanisms are dislocation scattering and ionized point-defect/impurity scattering [8]. This implies a decrease in the material resistivity explaining the resistivity behavior at lower temperature.…”

Section: Methodsmentioning

confidence: 96%

Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

Baghdadli

Hamady

Gautier

et al. 2009

Phys. Status Solidi (c)

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In this report, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated. The resistivity, Hall mobility and carrier concentration were measured by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts. The current‐voltage measurements between two planar gold and titanium/aluminum electrodes were performed. To analyze the structural properties, the polarized Raman spectra were measured with a micro‐Raman spectrometer. The resistivity displays a strong increase with respect to the boron composition in BGaN alloy, directly related to the decrease of the n‐type carrier concentration, while the mobility increases with boron content, well correlated to the structural measurements showing a good crystalline quality of the BGaN layers. This boron‐controlled resistivity is very promising for using the BGaN based materials in microelectronic and optoelectronic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 96%

Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

Baghdadli

Hamady

Gautier

et al. 2009

Phys. Status Solidi (c)

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“…SPICE model was developed based on parameters extracted from the high temperature characterization. At cryogenic temperatures certain anomalies similar to those observed for the SiC Schottky rectifiers [1,3,4] were observed and the possible reasons for the anomalies has been modeled. A two Schottky barrier height effect was observed for forward conduction at low temperatures.…”

Section: Contributed Articlementioning

confidence: 60%

“…The temperature dependence of I-V characteristics of GaN Schottky diodes Ga-face and N-face has been studied elsewhere [3]. Thermal effects of GaN Schottky diodes on I-V characteristics has also been studied [4]. In this paper we report high temperature characterization up to 125 °C and the cryogenic operation of a 600 V, 4 A GaN Schottky rectifiers from Velox Semiconductors.…”

mentioning

confidence: 94%

High‐low temperature performance of GaN 600 V Schottky rectifiers

Naik

Marron

Chow

2011

Phys. Status Solidi C

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The performance of a 600 V gallium nitride Schottky rectifier at high temperatures up to 125 °C and cryogenic operation has been reported. A 600 V, 4 A GaN Schottky rectifier from Velox semiconductors has been used for the characterization. Forward conduction and reverse blocking performance was measured down to 77 K. Two Schottky barrier heights have been noticed at low temperatures and a tunnelling limited reverse leakage current was observed. The SPICE model parameters are also extracted for circuit simulation purposes (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The structure of GaN schottky diode is shown in Fig. 1 while several critical parameters [5] used for the simulation is given as in table 1 Barrier height 1.2eV schottky contact in series with a specific onresistance Ron, which includes the contribution resistance, from the epitaxial layer, substrate, and contact Here we can neglect the substrate and ohmic contact resistance [8]. The specific on resistance Ron of the diode, is seen at higher levels of current when the series resistance of the device takes over and provides an additional voltage drop.…”

Section: Simulation Of N-gan Schottky Diodementioning

confidence: 99%