The thermal expansion coefficient and Gruneisen parameter of InP crystal at low temperatures

Haruna, Katsuji; Maeta, Hiroshi; Ohashi, Kazutoshi; Koike, T.

doi:10.1088/0022-3719/20/32/013

Cited by 27 publications

(14 citation statements)

References 12 publications

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“…The experimental data drawn in star dots are from Refs. [46,48,50]. The data drawn in triangular dots are from Refs.…”

Section: Discussionmentioning

confidence: 99%

“…A numerical list of these thermal expansion coefficients is given in Table 2. For a quantitatively evaluation, we compared present results with a few reports from experimental measurement for AlN [46], BP [46], GaAs [47], GaSb [48], InP [49,50] and GaP [46,51] rameters for most of the other III-V phases are still unavailable. These comparisons for AlN, GaSb, InP, and GaP are presented in Fig.…”

Section: Linear Thermal Expansion Coefficientmentioning

confidence: 99%

See 1 more Smart Citation

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Wang

2009

Physica Status Solidi (b)

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The temperature dependences of the Grüneisen parameter, heat capacity, bulk modulus and linear thermal expansion coefficient of sixteen III–V zincblende compounds are studied by first‐principles response‐function calculations. The fundamental relationships among these physical parameters are explored. Negative thermal expansions at lower temperature are found in most of these III–V phases except for the nitrides and boron compounds. By analyzing the cell‐volume dependences of the phonon spectrum, it is found that the phases with a negative thermal expansion show a significant acoustic phonon weakening at the X‐point in their phonon dispersion, while slight weakening is only seen around the L‐point for those boron phases. There is no sign of phonon weakening in the nitrides. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The experimental data drawn in star dots are from Refs. [46,48,50]. The data drawn in triangular dots are from Refs.…”

Section: Discussionmentioning

confidence: 99%

Section: Linear Thermal Expansion Coefficientmentioning

confidence: 99%

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Wang

2009

Physica Status Solidi (b)

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“…In the data of Ref. 41 we correct the point at T = 8 K (since the given value α th (8K) has the wrong sign) by interpolating between the measured values at 0 K and 15 K. The complete function α th (T ) is then used for the numerical integration indicated in Eq. (7).…”

Section: Inpmentioning

confidence: 99%

Temperature dependence of the electron spin g factor in CdTe and InP

Pfeffer

Zawadzki

2012

Journal of Applied Physics

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Temperature dependence of the electron spin g factors in bulk CdTe and InP are calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P·p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiment in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of the bandedge g values in the two materials. Good agreement between the theory and experiment strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

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“…Assuming that the electromagnetic analysis technique provides accurate solutions of (6), one can evaluate the total B-type uncertainty (nonstatistical uncertainty including calibration errors) of the real part of permittivity from (7). We can write 7where -the sensitivity coefficient is related to the quantity (where the subscripts found in Fig.…”

Section: A Permittivitymentioning

confidence: 99%

Use of Whispering-Gallery Modes and Quasi-${\rm TE}_{0{ np}}$ Modes for Broadband Characterization of Bulk Gallium Arsenide and Gallium Phosphide Samples

Křupka

Mouneyrac

Hartnett

et al. 2008

IEEE Trans. Microwave Theory Techn.

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The complex permittivity of bulk crystals of semiinsulating gallium arsenide (GaAs) and gallium phosphide (GaP) were measured over the frequency range from 4 to 30 GHz and at temperatures from 30 up to 300 K employing whispering-gallery-mode (WGM) and quasi-TE 0-mode dielectric-resonator techniques. At temperatures about 40 K, dielectric loss tangent values were below 10 6 for GaAs and below 10 5 for GaP. The use of several WGMs, as well as TE 0 modes excited in the same test sample enabled a broad frequency range of measurements (one decade). The real part of the permittivity of GaP and GaAs proved to be frequency independent at microwave frequencies. The dielectric loss tangents of GaAs and GaP increase with temperature and frequency.

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The thermal expansion coefficient and Gruneisen parameter of InP crystal at low temperatures

Cited by 27 publications

References 12 publications

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Temperature dependence of the electron spin g factor in CdTe and InP

Use of Whispering-Gallery Modes and Quasi-${\rm TE}_{0{ np}}$ Modes for Broadband Characterization of Bulk Gallium Arsenide and Gallium Phosphide Samples

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