The thermal impedance of new power semiconductor modules using AlN substrates

Mitic, G.; Sommer, K.; Dieci, D.; Lefranc, G.

doi:10.1109/ias.1998.730272

Cited by 10 publications

(7 citation statements)

References 3 publications

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“…The most important component affected here, namely, the metallized ceramic, is, therefore, in the forefront of current developments. Aluminum nitride ceramics are used for high-power modules instead of conventional aluminum oxide ceramics thanks to their outstanding thermal and mechanical properties [7]. Electrical discharge pulses at high frequencies can lead to disturbance of the power electronics, causing severe failures in high-power applications.…”

Section: Introductionmentioning

confidence: 99%

Localization of electrical-insulation and partial-discharge failures of IGBT modules

Mitic

Lefranc

2002

IEEE Trans. on Ind. Applicat.

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The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of insulated gate bipolar transistor modules. PD spectroscopy showed that the PDs from metallization edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PDs to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic.Index Terms-Electrical insulation, insulated gate bipolar transistor module, phase-resolved partial discharge.

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Section: Introductionmentioning

confidence: 99%

Localization of electrical-insulation and partial-discharge failures of IGBT modules

Mitic

Lefranc

2002

IEEE Trans. on Ind. Applicat.

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“…In this regard, solid dielectric substrates should also have appropriate thermal properties such as resistance to high temperatures and good thermal conductivity in addition to their desirable electrical insulation and mechanical properties. This is the case for AlN and Al 2 O 3 with a thermal conductivity of typically, respectively, 180 and 27 W/mK [8]. Note that, however, the thermal resistance of the AlN substrates assembled with IGBTs is around a factor of only three less than Al 2 O 3 substrates [8] (not 180/27 = 6.7 times for AlN and Al 2 O 3 materials itself).…”

Section: Introductionmentioning

confidence: 95%

“…This is the case for AlN and Al 2 O 3 with a thermal conductivity of typically, respectively, 180 and 27 W/mK [8]. Note that, however, the thermal resistance of the AlN substrates assembled with IGBTs is around a factor of only three less than Al 2 O 3 substrates [8] (not 180/27 = 6.7 times for AlN and Al 2 O 3 materials itself). Attaching the copper metallization to the ceramic substrate can be done by direct bonded copper (DBC) or active metal brazing (AMB).…”

Section: Introductionmentioning

confidence: 95%

Electrical Insulation Weaknesses in Wide Bandgap Devices

Ghassemi¹

2018

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

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The power electronics research community is balancing on the edge of a game-changing technological innovation: as traditionally silicon (Si) based power semiconductors approach their material limitations, next-generation wide bandgap (WBG) power semiconductors are poised to overtake them. Promising WBG materials are silicon carbide (SiC), gallium nitride (GaN), diamond (C), gallium oxide (Ga 2 O 3 ) and aluminum nitride (AlN). They can operate at higher voltages, temperatures, and switching frequencies with greater efficiencies compared to existing Si, in power electronics. These characteristics can reduce energy consumption, which is critical for national economic, health, and security interests. However, increased voltage blocking capability and trend toward more compact packaging technology for high-power density WBG devices can enhance the local electric field that may become large enough to raise partial discharges (PDs) within the module. High activity of PDs damages the insulating silicone gel, lead to electrical insulation failure and reduce the reliability of the module. Among WBG devices, electrical insulation weaknesses in WBG-based Insulated Gate Bipolar Transistor (IGBT) have been more investigated. The chapter deals with (a) current standards for evaluation of the insulation systems of power electronics modules, (b) simulation and modeling of the electric field stress inside modules, (c) diagnostic tests on modules, and (d) PD control methods in modules.

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“…These defects arise inevitably in IGBTs despite utmost care and precaution. Also, it has been reported that the deterioration of the insulating material depends on the severity of PD and its location [21][22][23][24]. Hence, optical localization of PD occurring on the edges of an AIN substrate immersed in silicone gel has been investigated [24].…”

Section: Pd Detection Behavior Diagnosis and Locationmentioning

confidence: 99%

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Arumugam

Gorchakov

Schoenemann

2015

IEEE Trans. Dielect. Electr. Insul.

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This paper investigates on dielectric condition assessment of high power Insulated Gate Bipolar Transistor (IGBT) modules through modern dielectric and diagnostic test methods. Two groups of IGBT samples (new and aged) are selected for this purpose. The new IGBT samples are grouped as 'set-1/virgin' and marked as 'A', 'B', 'C', 'D' and 'E' respectively. Amongst all, a fault (electric puncture) is introduced into the sample 'E'. The samples 'A' and 'B' are maintained virgin while samples 'C', 'D' and 'E' are subjected to partial discharge measurements as recommended by IEC60270.The samples are qualitatively ranked based on their PD level. Subsequently, the dielectric condition of each sample is measured and analyzed over a wide span and frequency. Following this, similar experiments are carried out on IGBT samples that were aged under service and their behaviour over a wide frequency is analyzed. In conclusion, the present study might provide an opportunity in improvement of diagnostic and quality control test methods that are currently exercised on IGBT modules and power conversion devices. Also, these findings enable discrimination of electrical discharges caused by IGBT modules in power conversion equipments which might help in accurate determination of their dielectric condition and reliability.

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The thermal impedance of new power semiconductor modules using AlN substrates

Cited by 10 publications

References 3 publications

Localization of electrical-insulation and partial-discharge failures of IGBT modules

Localization of electrical-insulation and partial-discharge failures of IGBT modules

Electrical Insulation Weaknesses in Wide Bandgap Devices

Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

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