The thermodynamic assessment of the Au–In–Ga system

Ghasemi, Masoomeh; Sundman, Bo; Fries, Suzana G.; Johansson, Jonas

doi:10.1016/j.jallcom.2014.02.071

Cited by 18 publications

(19 citation statements)

References 32 publications

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“…To figure out this composition discrepancy, we performed thermodynamic calculations in the Au–Ga–In–P quaternary systems via combining the two Au–Ga–In and Ga–In–P thermodynamic databases [ 51 , 52 ]. According to the pseudo-binary phase diagram (see Fig.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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“…10,11 Despite recent interest, 12,13 true understanding and modeling of ternary III-V nanowires obtained by the VLS mechanism with Au catalysts is still lacking. This is due to several issues such as: (i) complex equilibrium phase diagrams and nonequilibrium chemical potentials of quaternary alloys such as Au-Ga-In-As in our case, 14 (ii) uncertainties in determining the composition of the initial critical nucleus even if both Au droplet and solid compositions were exactly known, (iii) absence of any data on relevant surface energies of different interfaces and (iv) lack of reliable data on the kinetic parameters (diffusion lengths, desorption rates of As etc.) as functions of the composition.…”

Section: Introductionmentioning

confidence: 93%

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

et al. 2015

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InGaAs nanowires offer great promise in fundamental studies of ternary compound semiconductors with variable composition and opens up a wide range of applications due to their bandgap tunability and high carrier mobility. Here, we report a study on the growth of Au-seeded InGaAs nanowires by metal-organic vapour phase epitaxy and present a model to explain the mechanisms that govern the growth and composition evolution in ternary III-V nanowires. The model allows us to further understand the limitations on the growth rate and incorporation of the two group III species imposed by the deposition conditions and some intrinsic properties of the material transport and nucleation. Within the model, the evolution of InGaAs nanowire growth rate and composition with particle size, temperature and V/III ratio is described and correlates very well with experimental findings. The understanding gained in this study should be useful for the controlled fabrication of tunable ternary nanowires for various applications.

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“…[15] The main objective of this work was to determine which metallic phases exist in equilibrium with the III-V semiconductors. Very recently, thermodynamic assessment of the ternary Au-In-Ga system was performed by Ghasemi et al [16] This system is useful in the growth of Au-seeded semiconductor heterostructure and for that reason attracted more attention.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Study and Re-optimization of the Au-Ga Binary System

Jendrzejczyk-Handzlik

2017

J. Phase Equilib. Diffus.

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Activities of gallium in the liquid Au-Ga alloys were determined using galvanic cells with the solid oxide electrolyte. The cells of the type:were used in the temperature range from 1050 to 1273 K, and for four alloy compositions x Ga = 0.2, 0.4, 0.6 and 0.8. From the measured e.m.f.'s the activity of gallium was derived, which taken together with the recently measured heat of mixing provided precise description of the thermodynamic properties of the liquid phase. This study was supplemented with DTA experiments which were performed for three alloy compositions, namely 0.15, 0.25 and 0.40 gallium mole fraction. The results of these experiments verified with temperature of respective invariant reactions. Finally, present results, taken together with the information existing in the literature, were used for the calculation of the optimized Au-Ga phase diagram. ThermoCalc software was applied to complete these calculations.

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The thermodynamic assessment of the Au–In–Ga system

Cited by 18 publications

References 32 publications

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

Thermodynamic Study and Re-optimization of the Au-Ga Binary System

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