Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Tian, Zhou; Yuan, Xiaoming; Zhang, Ziran; Jia, Wuao; Zhou, Jian; Huang, Han; Meng, Jian-Qiao; He, Jun; Du, Yong

doi:10.1186/s11671-021-03505-2

Cited by 6 publications

(9 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Figure d, we observe a doublet from the S-2p peak at 161.9 and 163.1 eV corresponding to S-2p 3/2 and S-2p 1/2 attributed to the MoS 2 crystal. All the XPS results agree with previous reports. , …”

Section: Resultssupporting

confidence: 92%

“…In addition, the in-plane E 2g 1 (∼383.7 cm –1 ) and out-of-plane A 1g (∼403.1 cm –1 ) Raman modes appear in the Raman spectra that correspond to vibrational modes of MoS 2 . The Raman signals from both materials are in good agreement with the previously reported results. ,, The PL spectra from the samples are shown in Figure b. The PL emission peak from the WZ phase of InP NWs grown on Si is observed at ∼1.4 eV (880 nm).…”

Section: Resultssupporting

confidence: 89%

See 1 more Smart Citation

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response

et al. 2022

View full text Add to dashboard Cite

Mixed-dimensional van der Waals heterostructures are promising for research and technological advances in photonics and optoelectronics. Here we report vapor–liquid–solid (VLS) method-based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2. With optimized growth parameters (V/III ratio, flow rates of precursors, and growth temperature), we successfully grow high-quality InP NWs on MoS2. The density and vertical yield of NWs on MoS2 are significantly high. Due to the unique properties of both materials, we observe strong linear and nonlinear optical responses from the NW/MoS2 heterostructures. Intriguingly, in addition to strong second and third harmonic responses, the mixed-dimensional heterostructures show odd-order high harmonic generation up to seventh order. Our findings can open new possibilities for advancing attosecond physics on a new platform of mixed-dimensional heterostructures.

show abstract

Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 89%

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response

et al. 2022

View full text Add to dashboard Cite

show abstract

“…12−14 However, there are only few reports on the GaP/InP system. 15,16 Electroluminescence emission from the InP NW light-emitting diode has been demonstrated, which shows the feasibility of accessing one single emitter at a time. 17 On the other hand, GaP with its band gap at 2.26 eV is suitable for green color nanolight emitters.…”

Section: ■ Introductionmentioning

confidence: 95%

“…Nanosize light emitters are crucial for applications as a single-photon source in quantum technologies. , Of these, nanolight emitters emitting in visible wavelengths are also of particular interest. − One way to realize nanoscale light emitters is through NW synthesis/growth. Phosphide-based NWs have been demonstrated for various applications such as light emitters, − photovoltaic devices, , and energy storage. − However, there are only few reports on the GaP/InP system. , Electroluminescence emission from the InP NW light-emitting diode has been demonstrated, which shows the feasibility of accessing one single emitter at a time . On the other hand, GaP with its band gap at 2.26 eV is suitable for green color nanolight emitters.…”

Section: Introductionmentioning

confidence: 99%

Localized Visible Wavelength Photoluminescence from GaP/InP Heterostructure Nanowires

Tjahjana

Olivier

Herbani³

et al. 2022

J. Phys. Chem. C

View full text Add to dashboard Cite

We demonstrate growth of gallium phosphide (GaP) segments within indium phosphide (InP) nanowires (NWs), which forms GaP/InP heterostructure NWs. The GaP segments emit visible wavelength photoluminescence (PL) at 540 and 620 nm with and without growth interruption during growth, respectively, while the emission decay times are 8.0 and 6.0 ns, respectively, and the InP NWs emits PL at 870 nm. The visible wavelength emission of GaP is shown from PL mapping to be localized from the GaP segments. Furthermore, the PL emission is shown to be polarization-dependent. Both InP NWs and GaP segments tend to have polarizations in parallel directions of NWs as expected from their zinc blende structures. The experimentally obtained band gap values are verified with band structure calculations using density functional theory. We observed that the band gap of InP NWs of 1.41 (in experiment) to 1.65 eV (in simulation) slightly increases by 0.01−0.02 eV upon GaP segment incorporation. Such a study will help us to tune the emission and optical properties of GaP/InP NWs for future light sources in the information and communication technology applications.

show abstract

“…In the past decades, metal-organic chemical vapor deposition, molecular beam epitaxy, metal-organic vapor phase epitaxy, and chemical vapor deposition (CVD) methods are the commonly adopted technologies for the growth of high-quality III-V NWs. [24][25][26][27][28][29][30][31][32][33] Generally speaking, expensive wafers of GaSb, InAs, GaAs, InP, etc. are used as the growth substrates for overcoming the lattice mismatch during NWs growth process.…”

mentioning

confidence: 99%

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Yin

Guo

Liu

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

the near future by constructing all-around NWs field-effect-transistors (NWFETs), complementary metal-oxide-semiconductor (CMOS) inverts, etc. [6,7] On the other hand, with narrow bandgaps of 0.35 and 0.77 eV, InAs and GaSb NWs are also considered as the ideal channel semiconductors for next-generation high-performance infrared photodetectors, demonstrating high responsivity of ≈10 4 AW -1 and detectivity of ≈10 12 Jones for near-infrared to middleinfrared at room temperature. [8][9][10] Especially, with a closing bandgap (1.42 eV) of Shockley-Queisser limit, typical III-V semiconductor of GaAs NW has been studied in the fields of not only infrared photodetectors but also high-efficiency solar cells. [11][12][13][14] Owing to the extreme photon collection boost in free-standing NWs, the efficiency of single GaAs NW can be as high as 40%. [14] Recently, for achieving high-performance broad-spectrum photodetectors, ternary alloy III-V semiconductors of InGaAs NWs and GaAsSb NWs with full composition range have become the research stars. [15][16][17][18][19] The hot development of wearable or flexible optoelectronic devices is challenging the research of III-V NWs. [20][21][22][23] Recently, lightweight structured fabrics with tunable mechanical properties enabled by non-convex interlocked particles have been realized by Wang et al. [20] Obviously, the successful growth of largescale high-quality III-V NWs on the expected novelty functional fabrics directly will promote the next-generation wearable or flexible electronics and photoelectronics. In the past decades, metal-organic chemical vapor deposition, molecular beam epitaxy, metal-organic vapor phase epitaxy, and chemical vapor deposition (CVD) methods are the commonly adopted technologies for the growth of high-quality III-V NWs. [24][25][26][27][28][29][30][31][32][33] Generally speaking, expensive wafers of GaSb, InAs, GaAs, InP, etc. are used as the growth substrates for overcoming the lattice mismatch during NWs growth process. [34,35] Fortunately, metals of Au, Sn, Pd, etc. can be deposited on the selected substrates as growth catalysts for III-V NWs, followed by vapor-liquidsolid (VLS) or vapor-solid-solid (VSS) growth mechanism. [36,37] Generally speaking, during the VLS growth process, the adopted metals catalysts are liquid, which requires the eutectic Large-scale growth of high-quality III-V nanowires (NWs) on an expected substrate is challenging the next-generation optoelectronic devices. In this work, high-quality III-V NWs of binary GaSb, GaAs and ternary GaAs x Sb 1−x , In x Ga 1−x As are successfully prepared on the hard substrates of SiO 2 /Si, amorphous glass and flexible substrates of mica, glass fiber, and carbon cloth by adopting the simple and low-cost metal-catalyzed chemical vapor deposition (CVD) method. The homogeneity of morphology, crystallinity, and stoichiometry is checked by scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, implying the high-q...

show abstract

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Cited by 6 publications

References 52 publications

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response

Localized Visible Wavelength Photoluminescence from GaP/InP Heterostructure Nanowires

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Contact Info

Product

Resources

About

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Cited by 6 publications

References 52 publications

Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response

Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response

Localized Visible Wavelength Photoluminescence from GaP/InP Heterostructure Nanowires

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Contact Info

Product

Resources

About

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response

Direct Epitaxial Growth of InP Nanowires on MoS₂ with Strong Nonlinear Optical Response