We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 15 cm ؊2 ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 ؋ 10 6 A͞cm 2 , and high metallic conductivities, 10 4 S͞cm, in the FET channel; at 4.2 K, the current density is sustained at 10 7 A͞cm 2 . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is Ϸ3.5 cm 2 ⅐V ؊1 ⅐s ؊1 at 297 K, comparable with that found in fully crystalline organic devices.conjugated polymer ͉ electronic transport S tarting with the first demonstration of metallic conductivity in chemically doped conjugated polymers (1), there has been considerable interest in realizing a truly metallic state, wherein nonactivated metallic transport persists to low temperatures. Metallic transport, attributed to improved order of the molecular structure, was recently reported by Lee et al. (2) in polyaniline with room temperature conductivities of Ͼ10 3 S͞cm. While increasing the density of carriers, however, chemical doping also increases disorder, disrupts the intrinsic density of states (3), and thereby leads to localization of the carrier wavefunctions. This additional source of disorder is eliminated by using the capacitance and gate voltage (V g ) in field-effect transistors (FETs) to induce sufficient carrier densities to reach the metallic regime (4). However, the observation of metallic conduction in the two-dimensional regime within the channel of FETs has been generally limited by both the capacitance and electric field breakdown strength of commonly used gate dielectric materials.Electrolyte-gate dielectrics, first used by the inventors of the transistor in 1947, can support very high field-induced charge densities compared with conventional dielectrics (5, 6). Indeed, the conductivity of polymer FETs has been shown to be enhanced by several orders of magnitude when a polymer electrolyte is used (7). More recently, Panzer and Frisbie (8) demonstrated high conductivities (10 3 S͞cm) in polymer electrolyte gated polymer devices at carrier densities of Ϸ10 15 cm Ϫ2 . They assume that an ionic double layer near the interface between the electrolyte and the semiconducting polymer, with charge separation over the nanoscale, is responsible for the exceptionally large field-induced carrier densities. On the other hand, 15 years ago, Wrighton and colleagues (9) carefully examined the in situ doping in electrochemical FETs that utilized liquid electrolyte. Panzer and Frisbie (8) addressed the issue of electrochemical doping by depositing a thin layer of insulating material between the polymer semiconductor and the polymer electrolyte.In this work, we use a poly(ethylene oxide)͞lithium perchlorate (PEO͞LiClO 4 ) polymer electrolyte gate dielectric to study the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) FETs at h...