The two-dimensional electron gas at the CdTe/InSb interface: Cyclotron resonance and Shubnikov-de Haas investigations

Transport properties of Si-δ-doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in quantized subbands in the δ-layer. At low temperatures the MS data are consistent with self-consistent calculations and measurements of the Shubnikov-de Haas oscillations. The far-infrared cyclotron resonance lineshapes are well described by the Drude approximation using the obtained values of subband mobilities, concentrations and effective masses.

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The two-dimensional electron gas at the CdTe/InSb interface: Cyclotron resonance and Shubnikov-de Haas investigations

Cited by 2 publications

References 11 publications

Infrared spectroscopy with a pulsed high field magnet at a free electron laser

Infrared spectroscopy with a pulsed high field magnet at a free electron laser

An investigation of the multicarrier transport properties of -doped InSb at high temperatures using a mobility spectrum technique

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