n-GaAs of high peak mobility (p=250 000 cm2 V-' S-' ) has been grown in a molecular beam epitaxy (MBE) system with modified source-furnace geometry. High-resolution far-infrared magnetospectroscopy has been performed on this material. The photoconductive response at 2-4 K reveals a rich spectrum of excited state transitions. These are identified from theoretical models, and transitions from the ground impurity state up to the N=8 Landau level are noted. For the first time in MBE material, transitions involving D-states are observed.

No abstract

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

Far-infrared photoconductivity measurements on a GaAsIGaAIAs multiquantum well sample in which the normal to the plane of the sample is tipped away from the magnetic field direction are reported. In order to explain these results, the model developed previously by the authors involving a matrix diagonalization procedure is expanded and then applied to the experimental results. Good agreement is obtained for angles of tilt up to about 30". It is also shown that the model satisfactorily explains results previously obtained by Mueller et a/,

No abstract