The Two-Dimensional Short-Circuit Detection Protection For SiC MOSFETs in Urban Rail Transit Application

Hofstetter, Patrick; Bakran, Mark-M.

doi:10.1109/tpel.2019.2950966

Cited by 15 publications

(6 citation statements)

References 10 publications

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“…Much effort has been made in the short-circuit testing [27][28][29][30][31][32][33], [34] of SiC MOSFETs and its protection in power converter design [34][35][36][37][38]. In [27], comparative testing of two types of 1.2 kV/24 A SiC MOSFETs with Si MOSFET is given.…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

“…With the increasing commercial applications of SiC devices it is expected that more studies on short-circuits will be needed. At the application level, fast and robust shortcircuit protection [34][35][36][37][38] is essential to utilize the promising properties of SiC power devices without compromising the device-level design.…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

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Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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Section: B Selected Failure Mechanismsmentioning

confidence: 99%

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Comparatively, a better alternative is detecting the voltage across the parasitic inductance between Kelvin source and power source, so as to estimate the change rate of drain current, and an additional processing circuit is required to identify the SC fault. To achieve this goal, in [8,9], the resistive-capacitive (RC) and resistive-capacitive-diode (RCD) integrator circuits are respectively applied to filter the voltage for comparing it with a threshold voltage; in [10], the gate-source voltage is additionally evaluated to help distinguish between the normal state and the SC state.…”

Section: Introductionmentioning

confidence: 99%

Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and Its Improvement With Strong Antishort Circuit Fault Capabilities

Wang

Jørgensen

Zhao

et al. 2022

IEEE Trans. Power Electron.

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The single gate driven series connected power device stack possesses the advantages of high compactness and low cost. However, research of its short circuit (SC) characteristic remains uncovered. This paper fills this gap and points out that, with the single gate driver it has the potential of over-current limitation. Further, based on it, an improved single gate driven SiC MOSFET stack with strong anti-short circuit fault capabilities is proposed. By adding auxiliary circuits to adjust the driving process of the single gate driver, the SiC MOSFET stack can be automatically turned off in both SC conditions of Fault Under Load (FUL) and Hard Switch Fault (HSF), while the normal working principle of the stack is not influenced. Neither active control nor overcurrent detection is required, which is the biggest merit of the proposed topology. Its design and analysis are presented in detail, followed by the validation by conducting simulations and experiments. 1

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“…Several studies have demonstrated the surge current capabilities of body-PiNdiodes and embedded Schottky barrier diodes (SBDs) in SiC MOSFETs and their related failure mechanisms. [3][4][5][6][7][8] The main failure mechanism has been found to be the heat generated by forward voltage drops under surge current stress, which melts the source metal and/or ruptures the silicon oxide layers. However, the methodology to improve the surge current capability of the internal diodes in SiC MOSFETs has yet to be demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

Kitamura

Kato

Tanaka

et al. 2022

Jpn. J. Appl. Phys.

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This study investigates the surge current capabilities of embedded Schottky barrier diodes (SBDs) in SiC SBD-integrated trench MOSFETs (SWITCH-MOSs) using titanium and nickel for the Schottky metals. The results demonstrated that a 25 % enhanced surge current capability can be achieved for an embedded SBD with a higher barrier height of nickel compared to those with titanium and that it was comparable to body-PiN-diodes in a standard SiC trench MOSFET (IE-UMOSFETs). Furthermore, the study demonstrated the superior surge current capabilities of body-PiN-diodes in IE-UMOSFETs that have wide and thick Cu heat capacitance blocks attached to chip surfaces, and a significant improvement of 57 % in surge current capability was achieved with 2.9 × 4.1 mm2 wide and 0.4 mm thick Cu blocks. Notably, there was no sacrifice of I-V characteristics in the third quadrants and reverse recovery characteristics or the on resistance in the first quadrant with the Cu blocks.

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The Two-Dimensional Short-Circuit Detection Protection For SiC MOSFETs in Urban Rail Transit Application

Cited by 15 publications

References 10 publications

Power Electronics Reliability: State of the Art and Outlook

Power Electronics Reliability: State of the Art and Outlook

Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and Its Improvement With Strong Antishort Circuit Fault Capabilities

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

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