The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Liu, W.; Khatibzadeh, A.; Sweder, J.; Chau, Hin-Fai

doi:10.1109/16.481724

Cited by 96 publications

(27 citation statements)

References 12 publications

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“…The F varies from 1:7 2 10 5 to 5:7 2 10 5 V/cm for a bias of 0 to 05 V. As mentioned above, the 0 can be caused by several effects. However, the BBT contribution has been found to be important at room temperature only for F > 7 2 10 5 V/cm [2], so that it can be ruled out here. Therefore, PF and TAT will be considered next.…”

Section: Resultsmentioning

confidence: 84%

“…This instability is due to the negative temperature coefficient of emitter-base turn-on voltages and the strong electrothermal positive feedback with high thermal resistance. The thermal instability can be reduced by use of a ballast resistor in series with each emitter or base [2], [3] or by thermal shunt techniques [4]. On the other hand, it is well known that a passivation ledge around an emitter periphery must be incorporated to ensure the reliability [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

“…This electric field-enhanced generation rate (0) of charge carriers occurs when the F at the junction reaches values of about 10 5 010 6 V/cm. The 0 can be caused by several effects: the Poole-Frenkel (PF) effect [3], Schottky barrier lowering [2] or trap-assisted tunneling (TAT), and band-to-band tunneling (BBT) [4]. As a result, (1) is modified to [4] JgA = qn i W A 0 g :…”

Section: Introductionmentioning

confidence: 99%

“…This diode assessment is currently quite popular in the defect study of silicided shallow junctions [2], as it reveals relevant information for the development of deep submicron complementary metal-oxide semiconductor (CMOS) technologies and in particular for the optimization of source/drain junctions. The latter are fabricated in a retrograde well, which has a fairly high maximum doping density.…”

Section: Introductionmentioning

confidence: 99%

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Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Jeon

Park

Hong

2001

IEEE Trans. Electron Devices

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Abstract-A InGaP/GaAs heterojunction bipolar transistor structure is proposed in which the base epi-layer underneath the extended ledge works as a base ballast resistor. The structure eliminates the critical alignment for a passivation ledge formation as well as additional process steps for external base ballast resistor. Both ballasted and unballasted devices were fabricated and compared. Small signal equivalent circuit gives us the magnitude of the effective ballast resistance. The thermal characteristics, including gain-collapsed -and regression curve are shown and modeled. The temperature dependency of base sheet resistance and its influence on the device performance are also discussed.

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Section: Resultsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Jeon

Park

Hong

2001

IEEE Trans. Electron Devices

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“…The device sizes of the two stages are 240 μm 2 and 1280 μm 2 . Each device includes ballast resistors (R b1 and R b2 ) to avoid thermal runaway [5]. The bias and the RF signal path are separated to preserve gain.…”

Section: Power Amplifier Designmentioning

confidence: 99%