The use of surface photovoltage measurements for the surface characterisation of photoconductors

Surface photovoltage phenomena: theory, experiment, and applications

“…47 were identi®ed as bulk and surface phonons, respectively, using a similar comparison with photoconductivity. More examples of use of this procedure may be found in, e.g., [319,334,360,365,366,371,375,386,407].…”

“…Accordingly, should be ideal (i.e., 1) for a pure barrier SPV, and smaller than 1 when surface trapping of excess carriers is present. Similarly, $ 2 in the presence of signi®cant bulk trapping, just like in a Schottky diode [366,612].…”

“…Measuring the SRV as well, Barattain and Garrett were able to give absolute numbers for k n and k p . In the 1970s, the k n ak p ratio was also determined from the dependence of the small signal SPV on temperature [756] and by ®tting the SPV=f Á p curve [366].…”

“…One indirect quantitative tool for detecting bulk states, already suggested in Section 5.2.1, is the identi®cation of an ideality factor of $ 2 in SPV f I, as in I ÀV analysis [366,612]. There are two signi®cant problems with this approach: (a) The SCR recombination must be high for to change signi®cantly.…”

Surface characterization

“…XPS studies verify the occurrence of S/Se substitution in single-crystal CdSe and CdS photoanodes used in photoelectrochemical cells (419) and help predict stability and current output parameters. Other studies of CdS have used AES/XPS (343,358). Defect centers in vapor-phase ZnSSe were characterized by cathodoluminescence (142).…”