The Vapour Phase Etching and N-Type Doping of Indium Phosphide

Abstract

The conditions for the in situ planar etching of (100) indium phosphide in the In/PCl3 system for both hydrogen and nitrogen ambients have been established. Epitaxial layers grown on substrates vapour etched under these conditions show an improved flatness. The electrical properties of silicon and tin doped indium phosphide layers obtained using mixtures of dichlorosilane and stannic chloride in hydrogen are compared with results from sulphur doped material. Both silicon and tin demonstrate a PCl3 concentration dependence and all three dopants demonstrate 77 K Hall mobilities which imply strong compensation when compared with published theoretical calculations