1968
DOI: 10.1039/j19680001089
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The vapour pressure and resistivity of selenium at high temperatures

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Cited by 51 publications
(11 citation statements)
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“…Significant MoSe 2 or MoS 2 layer forms in both cases: 510 nm MoS 2 layer in Figure (b) for CZTS and 730 nm MoSe 2 layer in Figure (c) for CZTSe. Given the short selenization time of 7 min in contrast to the 12 min sulfurization time, the smaller vapor pressure of selenium due to a saturation pressure of approximately 0.25 atm at 585 °C, it can be concluded that the selenization reaction rate of Mo is much faster than the sulfurization reaction rate. Recently, it was reported that the control of the MoSe 2 layer thickness is important in synthesizing high‐performance CZTSe PV devices.…”
Section: Resultsmentioning
confidence: 99%
“…Significant MoSe 2 or MoS 2 layer forms in both cases: 510 nm MoS 2 layer in Figure (b) for CZTS and 730 nm MoSe 2 layer in Figure (c) for CZTSe. Given the short selenization time of 7 min in contrast to the 12 min sulfurization time, the smaller vapor pressure of selenium due to a saturation pressure of approximately 0.25 atm at 585 °C, it can be concluded that the selenization reaction rate of Mo is much faster than the sulfurization reaction rate. Recently, it was reported that the control of the MoSe 2 layer thickness is important in synthesizing high‐performance CZTSe PV devices.…”
Section: Resultsmentioning
confidence: 99%
“…The vapor pressures of sulfur and selenium put an upper limit to temperatures that can be reached in a solid state reaction, typically around 700 • C in our work. [27][28][29] CS 2 has been known to be a powerful sulfidizing agent for oxides, which allows gas flow reactions to be carried out at higher temperatures. 30-32 Initial stoichiometric powders were kept in an alumina crucible and then loaded in a quartz reaction tube.…”
Section: Methodsmentioning
confidence: 99%
“…The equilibrium Se vapor pressure was obtained after Baker [17]. Crystal growth was carried out for 15-30 days.…”
Section: Methodsmentioning
confidence: 99%