The vertically stacked organic sensor-transistor on a flexible substrate

Jeong, Shin Woo; Jeong, Jin Wook; Chang, Sung Ok; Kang, Seok Hun; Cho, Kyoung Ik; Ju, Byeong Kwon

doi:10.1063/1.3530448

Cited by 16 publications

(12 citation statements)

References 22 publications

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“…Vertically stacked passive pixels, where the transistor is integrated beneath the OPD active area, could represent a very interesting alternative since they would allow to achieve a higher geometrical fill‐factor (FF, defined as the ratio between the active detector area and the overall pixel area),191 though increasing the number of stacked layers and therefore complicating the fabrication process. In vertical passive pixels, the transistor is fabricated first and then passivated in order to protect it during the detector processing.…”

Section: Applications Of Organic Photodetectorsmentioning

confidence: 99%

Organic Light Detectors: Photodiodes and Phototransistors

et al. 2013

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While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

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Section: Applications Of Organic Photodetectorsmentioning

confidence: 99%

Organic Light Detectors: Photodiodes and Phototransistors

et al. 2013

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“…The OPD output current is modulated by the light intensity; the highest current density at 41 mW cm −2 with a reverse bias of − 1 V is 0.135 mA cm −2 (27 μA) while the dark current is as low as 17.5 × 10 −6 mA cm −2 . This dark current compares favourably with dark currents of OPDs from all-organic PPSs; these dark currents range from 2.25 mA cm −2 for Jeong et al with a P3HT/PCBM photodetector [18] to 0.26 mA cm −2 for Someya et al with their copper phthalocyanine/PTCDI: 3,4,9,10-perylenetetracarboxylic-diimide photodetector. [19] For the hybrid APS of Tedde et al, [11] the dark current reached 10 −5 mA cm −2 with a photodetector made out of P3HT/PCBM.…”

Section: Electro-optical Characterisationmentioning

confidence: 59%

An all-organic active pixel photosensor featuring ion-gel transistors

Prévot

Alvares

Micolich

et al. 2015

Journal of Organic Semiconductors

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We report the development of an all-organic active pixel sensor (APS) composed of a poly3-hexylethiophene (P3HT) and phenyl-C61-butryic acid methyl ester (PCBM) organic photodiode (OPD) connected to two organic field effect transistors and present here a study of its electro-optical characteristics. The OPD showed dark currents of 17.5 nA cm −2 with an external quantum efficiency of 30%. Our organic transistors feature UV-curable ion gels to obtain a high-capacitance dielectric with a combination of high electronic mobility, up to 4 cm 2 V −1 s −1 , and extremely low operating voltage, below 2 V. The APS configuration gives an in-pixel amplification of the photodetector response, with the gain reaching 40 under a 41 mW cm −2 illumination.

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“…Many of the reported of 1 T image sensors in the literature only measure performance in DC mode [72][73][74][75][76] despite the fact this architecture enables charge integration within a pixel, making it practical to capture images at video frame rates. Despite this drawback, the literature on solution processable, flexible and large area 1 T image sensors and pixels shows tremendous efforts in the heterogeneous integration of high performance photodiodes and TFTs as summarized in table 2.…”

Section: Case Studiesmentioning

confidence: 99%

“…Additionally, this array was fabricated on a polyethylene naphthalate substrate with processing temperatures below 150°C and demonstrated a 2.5 cm bending radius before performance degradation. Alternatively, the TFT can be deposited on top of a bottom-illuminated OPD as demonstrated by Jeong et al [74]. The aluminum cathode shields the TFT from the light, avoiding any undesired phototransistor effects.…”

Section: Case Studiesmentioning

confidence: 99%