The zinc-loss effect and mobility enhancement of DUV-patterned sol–gel IGZO thin-film transistors

Wang, Kuan Hsun; Zan, Hsiao‐Wen; Soppera, Olivier

doi:10.1088/1361-6641/aaa611

Cited by 9 publications

(11 citation statements)

References 22 publications

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“…Along with the spectrum of the lamp, the efficiency of the photoinduced conversion depends on various additional parameters, one of which is the emitted power density. The levels of irradiance (optical power per unit area) reported in the literature are rather wide and spans from 0.8 mW cm −2 (lower end) up to 1 W cm −2 (higher end) . Many studies, however, used DUV lamps with irradiance values smaller than 60 mW cm −2 .…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…Furthermore, the application of DUV light can be carried out across a wide range of processing times depending on the application and the type of UV lamp employed. It has been shown that exposure for only 30 s is sufficient when used as a mean for patterning the metal‐oxide precursor, but increases to tens of minutes, or even several hours, when a complete chemical conversion is required . An overview of the electrical properties of selected DUV treated metal‐oxide TFTs can be found in Table 2 .…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…The studies discussed in the following section focus on the simultaneous use of DUV and thermal annealing . While the annealing temperature is typically <200 °C, there are some exceptions where higher temperatures were reached . Park et al investigated the formation of dielectric films such as AlO x , ZrO x , HfO x , via DUV exposure for 30 min in N 2 .…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…This chemical route is known for its low decomposition temperature (<200 °C), but requires longer annealing time typically on the order of 1 h. Hwang et al demonstrated ZnO TFTs with mobility of ≈0.6 cm 2 V −1 s −1 for either via TA for 1 h at 150 °C, or via simultaneous DUV treatment and TA (150 °C) for only 3 min . Synthesis of semiconducting IZO films from nitrates or alkoxides precursors has also been produced through a combination of UV exposure and TA, albeit at slightly elevated temperatures (200–300 °C) and longer process times (4 h) …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…To date, two different approaches that rely on the use of DUV to pattern solution‐processed metal‐oxide films have been reported (Figure 4): i)Direct light patterning through solubility contra‐st: Here, exposure of the precursor layer to DUV irradiation is altering the solubility of the film in the exposed areas due to partial photoconversion of the precursor to an MOM network. Following a few minutes of exposure through a shadow mask, the unexposed areas of the precursor film remain soluble and can be dissolved/etched using common solvents or dilute etchant solutions. ii)Patterning through surface wetting contrast: Substrate exposure to DUV increases the surface energy as compared to nonexposed areas.…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

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Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

See 3 more Smart Citations

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

Low‐Temperature Thin‐Film Combustion Synthesis of Metal‐Oxide Semiconductors: Science and Technology

Wang

Huang

Facchetti

et al. 2022

Amorphous Oxide Semiconductors

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Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

Kang

Heo

et al. 2020

Chemistry A European J

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For the fabrication of next‐generation flexible metal oxide devices, solution‐based methods are considered as a promising approach because of their potential advantages, such as high‐throughput, large‐area scalability, low‐cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low‐temperature, solution‐processed, flexible, metal oxide semiconductor devices, from a single thin‐film transistor device to fully integrated circuits and systems. The main challenges of solution‐processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy‐harvesting devices for self‐powered systems that integrate displays, sensors, data‐storage units, and information processing functions.

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The zinc-loss effect and mobility enhancement of DUV-patterned sol–gel IGZO thin-film transistors

Cited by 9 publications

References 22 publications

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Low‐Temperature Thin‐Film Combustion Synthesis of Metal‐Oxide Semiconductors: Science and Technology

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

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