Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)

Abstract

In this work, we clarify the underlying physics and the acceptor ionization process in the In-Mg co-doping GaN. The fundamental understandings are also applicable for other co-doping nitride systems. We show the effective acceptors ionization stems mainly from the band structure tuning effect of the 4d orbitals of In atoms. In addition, temperature dependent defect-related photoluminescence analysis was proposed to examine the energy position of Mg impurity levels, which is crucially important in the design for high p-doping. Finally, a hole concentration, which is nearly one order of magnitude higher than what is typically achievable by direct Mg-doping, was achieved.

Highly Efficient Oxygen Evolution Reaction Enabled by Phosphorus Doping of the Fe Electronic Structure in Iron–Nickel Selenide Nanosheets

“…has also emerged as an efficient strategy to regulate the electronic structure of target materials. [18,20,[28][29][30][31][32][33] In this study, we have developed a facile approach to independently regulate the electronic structure of Fe in Ni 0.75 Fe 0.25 Se 2 nanosheets by P doping. 1b) can be ascribed to the (200), (210), (211), (220), (311), (230), (321) crystallographic planes of cubic Ni 0.75 Fe 0.25 Se 2 (JCPDS No.…”

“…has also emerged as an efficient strategy to regulate the electronic structure of target materials. [ 18 , 20 , 28 , 29 , 30 , 31 , 32 , 33 ] In this study, we have developed a facile approach to independently regulate the electronic structure of Fe in Ni 0.75 Fe 0.25 Se 2 nanosheets by P doping.…”

“…has also emerged as an efficient strategy to regulate the electronic structure of target materials. [18,20,[28][29][30][31][32][33] In this study, we have developed a facile approach to independently regulate the electronic structure of Fe in Ni 0.75 Fe 0.25 Se 2 nanosheets by P doping. [ 34] The broad peak at around 25°is ascribed to the carbon cloth substrate (Figure S3, Supporting Information).…”