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Li, Baojun; Chua, Soo-Jin; Fitzgerald, Eugene A.

doi:10.1117/1.1578085

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Cited by 10 publications

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On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

Das

Das²

2009

Opt Quant Electron

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In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si 1−y Ge y /Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si 1−y Ge y layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si 1−y Ge y /Si quantum wells on the bandwidth (BW) and Responsivity of the photodetector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize BWquantum efficiency product.

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On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

Das

Das²

2009

Opt Quant Electron

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Ge/Si photodetectors and group IV alloy based photodetector materials

et al. 2009

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Photodetectors using Si, Ge and their alloys with other group IV elements are of current interest for application in telecommunication as well as in optical interconnects. We have presented in this paper our work on resonant cavity enhanced Si/SiGe multiple Quantum Well and Ge Schottky photodetectors. Calculated values of external quantum efficiency for GeSiC based photodetectors are also reported. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors using strong Quantum Confined Stark Effect and Franz-Keldysh Effect in these structures and properties related to photodetection using these new materials are also described.Keywords Photodetectors · Ge/SiGe quantum wells · Direct gap in Ge · Quantum confined stark effect · Franz Keldysh effect · GeSn and SGeSn alloys

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Optoelectronic properties of semiconductor nanowires

Pan

Zhu

2015

Semiconductor Nanowires

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Cited by 10 publications

References 28 publications

On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

Ge/Si photodetectors and group IV alloy based photodetector materials

Optoelectronic properties of semiconductor nanowires

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