Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Wu, Hao; Duan, Baoxing; Yang, Luoyun; Yang, Yintang

doi:10.1088/1674-1056/28/2/027302

Cited by 5 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the Ga 2 O 3 channel has n-type doping, only p-type or semi-insulating SiC substrates can be selected to prevent leakage current. For an n-type drift region, a p-type layer is expected to form the reduced surface electric field (RESURF) effect, which has been applied in Si-based and GaN-based MOSFETs and exhibits a satisfying effect on improving the breakdown voltage [42][43][44]. The basic principle is to reduce the peak electric field in the drift region and increase the depletion region width, thereby improving the breakdown voltage of the device.…”

Section: Breakdown Characteristics 41 Sic Thickness and Doping Concen...mentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

View full text Add to dashboard Cite

Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices. However, its low thermal conductivity is reckoned to be a severe issue in the thermal management of high-power devices. The epitaxial integration of gallium oxide thin films on silicon carbide (SiC) substrates is a possible solution for tackling the cooling problems, yet premature breakdown at the Ga2O3/SiC interface would be introduced due to the relatively low breakdown strength of SiC (3.2 MV/cm). In this paper, the on-state properties as well as the breakdown characteristics of the Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using the technology computer-aided design (TCAD) approach. Compared with the full-Ga2O3 MOSFET, the lattice temperature of the Ga2O3-on-SiC MOSFET was decreased by nearly 100 °C thanks to the high thermal conductivity of SiC. However, a breakdown voltage degradation of >40% was found in an unoptimized Ga2O3-on-SiC MOSFET. Furthermore, by optimizing the device structure, the breakdown voltage degradation of the Ga2O3-on-SiC MOSFET is significantly relieved. As a result, this work demonstrates the existence of premature breakdown in the Ga2O3-on-SiC MOSFET and provides feasible approaches to further enhance the performance of hetero-integrated Ga2O3 power devices.

show abstract

Section: Breakdown Characteristics 41 Sic Thickness and Doping Concen...mentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

View full text Add to dashboard Cite

show abstract

“…The transport property of carriers is essential to modeling [20,21] and simulation [22,23] of the MOSFETs. [24][25][26][27] There has been extensive research into the surface roughness scattering limited mobility, [28,29] while few attention has been paid to the impacts of remote Coulomb scattering on the hole mobility at cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs*

Zhang¹,

Chang²,

Du³

et al. 2020

Chinese Phys. B

View full text Add to dashboard Cite

The impacts of remote Coulomb scattering (RCS) on hole mobility in ultra-thin body silicon-on-insulator (UTB SOI) p-MOSFETs at cryogenic temperatures are investigated. The physical models including phonon scattering, surface roughness scattering, and remote Coulomb scatterings are considered, and the results are verified by the experimental results at different temperatures for both bulk (from 300 K to 30 K) and UTB SOI (300 K and 25 K) p-MOSFETs. The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature (4.2 K). The results reveal that as the temperature decreases, the RCS due to the interfacial trap charges plays an important role in the hole mobility.

show abstract

“…In the past decades, lots of techniques were addressed to achieve high breakdown voltage (V br ), including field plate [4][5][6][7], high-K passivation [8][9][10][11], superjunction [12][13][14][15] and so on. In 2001, an AlGaN/GaN HEMT using reduced surface field (RESURF) concept was proposed to improve the V br [16], and many research works have been carried out ever since [17][18][19][20][21][22][23][24][25]. For the RESURF HEMT, p-type dopants are doped in the buffer layer.…”

mentioning

confidence: 99%

Numerical analysis of high‐voltage RESURF AlGaN/GaN high‐electron‐mobility transistor with graded doping buffer and slant back electrode

Zhu

Zhou

Feng

et al. 2019

Micro & Nano Letters

View full text Add to dashboard Cite

A reduced surface field (RESURF) AlGaN/GaN high-electron-mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p-dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower-left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF-state, which flats the electric field and enhances the breakdown voltage (V br). Additionally, the low p-dopant density near the top of GDB achieves the device with low ON-state resistance (R ON). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE-RESURF HEMT) with the same gate-drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE-RESURF HEMT (8.24 and 13.84 GHz).

show abstract

Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Cited by 5 publications

References 13 publications

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs*

Numerical analysis of high‐voltage RESURF AlGaN/GaN high‐electron‐mobility transistor with graded doping buffer and slant back electrode

Contact Info

Product

Resources

About