Highly c-axis oriented Co 95 Cr 5 films with perpendicular anisotropy were grown epitaxially on Si ͑111͒, using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy ͑TEM͒, selected area electron diffraction, and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111) Si ʈ (111) Ag ʈ (0001) CoCr ;͓220͔ Si ʈ ͓220͔ Ag ʈ ͓1100͔ CoCr. Magnetic domain structures of these films were observed as a function of thickness; t, in the range, 200 ÅϽtϽ700 Å using a wedge-shaped sample, and temperature-dependent measurements were carried out by in situ resistance heating. Thickness was measured locally by electron energy loss spectroscopy. At room temperature, below a critical thickness, t c Ϸ300 Å, the magnetization was found to be effectively in-plane of the film, and above t c a regular, stripe-like domain pattern with a significant, alternating in sign, perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in situ heating up to 350°C. The critical transition thickness, t c , which is a function of K u and magnetostatic energy, was found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increase gradually with thickness; Lϭ90 nm at tϭ300 Å, and Lϭ110 nm at tϭ700 Å.