Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Тарасова, Е. А.; Obolenskaya, E. S.; Hananova, A. V.; Obolensky, S. V.; Земляков, В.Е.; Егоркин, В. И.; Nezhenzev, A. V.; Saharov, Andrey; Zazul’nokov, A. F.; Lundin, W. V.; Заварин, Е. Е.; Medvedev, G.V.

doi:10.1134/s1063782616120216

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…At present, the classical capacitance-voltage profiling technique using a Schottky barrier resolves only one peak in the concentration profile of pHEMT structures, which is attributed to a QW (2DEG channel) [18]. In ECV experiments, in contrast, we observe two peaks: from a delta layer and from a QW (Figure 2).…”

Section: Ecv Profilingmentioning

confidence: 83%

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Ivanova¹,

Yakovlev²,

Зубков³

et al. 2019

Turk J Phys

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We present experimental and theoretical investigations of pHEMT heterostructures with AlGaAs/InGaAs/GaAs quantum wells (QWs) and/or a delta-doped layer, which can be used as active regions in transistors operating in the 4-18 GHz frequency range. Using the electrochemical capacitance-voltage setup ECV Pro we, for the first time, experimentally observed a concentration peak from the near-surface delta layer of the pHEMT structure together with a peak of QW enrichment. The capacitance of the electrolyte-semiconductor contact was measured by Agilent LCR-meter, which was connected to the electrochemical cell of ECV Pro through a specially designed relay module. Using numerical simulation of the electronic characteristics of nanoheterostructures by self-consistent solution of Schrödinger and Poisson equations we determined electrostatic potential profiles for band edges, band offsets, quantum-confinement levels, and concentration profiles of charge carriers for the samples under investigation. The impact of delta-layer position on the confined energy levels and carrier concentration in the QW was experimentally and theoretically analyzed in detail. We determined the optimal distance between the QW and delta layer, which provides the most efficient process of supply of charge carriers to the QW. The conducted work is directed at improvement of SHF devices, allowing one to increase the gain coefficient and transconductance of transistors.

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Section: Ecv Profilingmentioning

confidence: 83%

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Ivanova¹,

Yakovlev²,

Зубков³

et al. 2019

Turk J Phys

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“…The carrier mobility for calculation of the transfer CVC and further analysis of non-linear distortion was measured experimentally. At the first stage, the voltage-capacitance characteristics were used to determine the carrier concentration in accordance with the procedure outlined in [7].…”

Section: Calculation Results and Discussionmentioning

confidence: 99%

Analysis of nonlinear distortions of DpHEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping

et al. 2022

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Computational and experimental studies of the characteristics of a high-power AlGaAs/InGaAs/GaAs DpHEMT were performed. A self-consistent numerical solution of the Schrodinger and Poisson equations was used to calculate the band diagram and the electron concentration in the channel of the transistor under study. The electron mobility in the transistor channel was estimated experimentally at 9300 cm2/V·s. The obtained transfer current--voltage characteristic of the transistor was used to calculate the parameters of a model differential amplifier (small-signal gain and third-order non-linear distortion factor). Keywords: AlGaAs/InGaAs/GaAs DpHEMT, nonlinear distortion, spacer layers.

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“…For the given dielectric density value, ion distributions have been calculated for the energies of 50, 70, 75, 80, 85, 90 and 100 keV. In addition, ion distribution calculations were performed for the silicon nitride density values of 2.15 and 3.17 g/cm 3 , corresponding to the amorphous and crystalline state [8]. Distribution of defects in the structure was also simulated with presence and absence of a silicon nitride layer.…”

mentioning

confidence: 99%

Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process

Егоркин

Obolenskiy

Zemlyakov

et al. 2022

Technical Physics Letters

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This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage. Keywords: ion implantation, breakdown voltage, GaN, power transistor.

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Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Cited by 8 publications

References 2 publications

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Analysis of nonlinear distortions of DpHEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping

Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process

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