Theoretical calculations of nonlinear electronic transport behavior in III‐nitrides: GaN and AlN

Rodrigues, Clóves Gonçalves; Vasconcellos, Áurea R.; Luzzi, Roberto

doi:10.1002/pssb.200844157

Cited by 12 publications

(7 citation statements)

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“…The decrease of occupancy of electrons at first band to 40% and the increase to 60% at second band at electric field greater than 400 kV/cm shows that electrons are transferring to high energy band at high field (> 400 kV/cm). [9][10]18]. Our results agree to Bertazzi et al [10] at electric field less than 350 kV/cm and closed to Chen et al [9] near 1 MV/cm.…”

Section: Resultssupporting

confidence: 90%

“…The simulation process repeated to evaluate the drift motion under constant electric field up to 1000 kV/cm and the following scattering process until the maximum flight time was achieved. The transport properties of GaN were reported by several researchers [9][10][11][14][15][16][17][18]. Carrier's drift velocity and average energy during the total simulation time t max were simulated respectively using (3) and…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

“…where j is a band index, P j is the softness coefficient, j th  is the ionization threshold energy and  j is the power exponent using the parameters listed in Table 2. 3.80 Impact ionization coefficients [18] were computed based on the number of times the electron (n e ) or hole (n h ) scattered due to impact ionization in the momentum space and the travelling distance of electron (l ei ) and that of hole (l hi ). The electron (α) and hole (β) impact ionization coefficients are the reciprocal of averaging distance for these carriers respectively as following.…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

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Carrier Transport Properties of GAN in High Electric Field

2019

IJRTE

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The Monte Carlo (MC) simulation of the carrier transport mechanisms including impact ionization at high electric field in GaN is presented. Two non-parabolic conduction and valence bands were considered for the simulation of transport properties of electron and hole respectively. The carriers’ drift velocity and energy are simulated as a function of applied electric field at room temperature. The maximum velocity of electron is 2.85 × 107 cm/s at 140 kV/cm. The velocity of electron is saturated at 2 × 107 cm/s at electric field greater than 300 kV/cm. In our work, the velocity of hole is 5 × 106 cm/s at 500 kV/cm. Electron energy increases as the electric field increase and fluctuated at electric field greater than 600 kV/cm when impact ionization occurred. The impact ionization rates are obtained by using modified Keldysh equation. The hole impact ionization rate is higher than that of electron. This work also shows higher electron impact ionization coefficient than that of hole at electric field greater than 4.04 MV/cm

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Section: Resultssupporting

confidence: 90%

Section: Monte Carlo Simulationmentioning

confidence: 99%

Section: Monte Carlo Simulationmentioning

confidence: 99%

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Carrier Transport Properties of GAN in High Electric Field

2019

IJRTE

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“…Poderosas teorias estocásticas estão também disponíveis dentro do enfoque sinergético de Haken [42]. Como descrito há algum tempo [19], nosso Grupo no IFGW-Unicamp tem proposto que em certas situações um tratamento ao nível microscópico (molecular e atômico) para evidenciar e descrever estruturas dissipativas auto-organizadas pode ser constituído pela mecânica estatística de não-equilíbrio, que aplicamos ao caso de sistemas semicondutores dopados [59][60][61][62] e fotoexcitados [63][64][65] e sistemas biológicos modelados [30].…”

Section: Como Realizar Esse Programa?unclassified

Complexidade, auto-organização e informação em sistemas dinâmicos

Vasconcellos

Rodrigues

Luzzi

2015

Rev. Bras. Ensino Fís.

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<p>Neste artigo consideramos os aspectos gerais dos temas emergentes na segunda metade do século passado, de complexidade, auto-organização e informação. Os três estão ligados pelo fato de estarem envolvidos na “teoria de sistemas dinâmicos”, e sobre esse ponto enfocamos a descrição aqui apresentada. Descreve-se o surgimento de comportamento complexo em tais sistemas dinâmicos em geral quando governados por uma teoria cinética não linear, a emergência de estruturas dissipativas sinergéticas à la Prigogine-Haken, e a teoria de informação via o enfoque de inferência científica proposto por Jeffreys-Jaynes.</p>

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“…Refs. [9][10]), and in the present paper we are adding a study on the coupled influence of the electric field strength and the concentration of carriers on the nonlinear mobility (that is, a mobility dependent nonlinearly on field and concentration) in n-doped InN.…”

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confidence: 99%

Nonlinear electronic transport behavior in Indium Nitride

Rodrigues

2012

Materials Chemistry and Physics

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keywords: Applications of Nonlinear Sciences; Applications in Engineering and Nanoscience.In recent decades the III-Nitrides semiconductors (like Gallium Nitride, Aluminium Nitride, and Indium Nitride) have been the object of intensive study. This is a consequence of the realization of the long-awaited possibility of growing satisfactory samples, leading to the increased development of electronic and opto-electronic devices (blue diodes, blue lasers, etc.) of large technological and industrial interest [1,2,3]. The GaN and AlN are semiconductors with band gaps and other characteristics that largely differ from those of InN (it may be noticed that it resembles the case of InAs in the family of the III-V semiconductors). Recently, the band gap of InN has been clarified as being 0.64 eV [4][5][6][7][8], which corresponds to the near infra-red region and enables AlN-GaN-InN-based nitride materials to be used for fabricating devices operating from the UV to near infra-red range. These properties of nitride semiconductors are being used to develop high efficiency tandem-type solar cells.Further, InN can be readily made as the n-type by introducing crystal defects [3]. Of large relevance are the studies of their optical and transport properties in situations in which they are working in far-fromequilibrium conditions. When under the action of intermediate to strong electric fields their transport properties are nonlinear (in the electric field intensity).We have considered such question in a series of papers (e.g. Refs. [9-10]), and in the present paper we are adding a study on the coupled influence of the electric field strength and the concentration of carriers on the nonlinear mobility (that is, a mobility dependent nonlinearly on field and concentration) in n-doped InN.In the study of transport phenomena it has been used variations of computational modeling approaches (in the domain of Nonequilibrium Molecular Dynamics and related to Monte Carlo computational methods). On the other hand, improved analytical methods, that is, nonlinear quantum kinetic theories for studying physical phenomena in systems arbitrarily departed from equilibrium, are desirable. An advantage that they may present in relation to the computational-modeling methods resides in that the explicit equation of motion for the basic nonequilibrium thermodynamic variables, which characterize the dissipative macrostate of the system, provide a better physical insight and interpretation of the results.Nonequilibrium quantum kinetic theories based on various intuitive techniques and ideas are presently available. One particularly appropriate for the purpose just stated, and which offers an elegant and concise analytical treatment of the theory of irreversible processes, has been derived from an approach based on a nonequilibrium ensemble formalism (since it can be founded on a variational principle, consisting in the maximization of the informational entropy in the statistical description, for short it is referred to as MaxEnt-NESOM [17][18][19][20][21]...

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Theoretical calculations of nonlinear electronic transport behavior in III‐nitrides: GaN and AlN

Cited by 12 publications

References 40 publications

Carrier Transport Properties of GAN in High Electric Field

Carrier Transport Properties of GAN in High Electric Field

Complexidade, auto-organização e informação em sistemas dinâmicos

Nonlinear electronic transport behavior in Indium Nitride

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