Theoretical Comparative Analysis of BER in Multi-Channel Systems With Strip and Photonic Crystal Silicon Waveguides

You, Jinhong; Lavdas, Spyros; Panoiu, Nicolae C.

doi:10.1109/jstqe.2015.2475602

Cited by 8 publications

(5 citation statements)

References 24 publications

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“…(4) into Eq. (1) and keeping only the linear terms in a(z, t), we arrive to the following system of equations [41,42]:…”

Section: Linearized Theoretical Modelmentioning

confidence: 99%

“…where Ω = ω − ω 0 and A (z, Ω) = F {a (z, t)} and A (z, Ω) = F {a (z, t)} are the Fourier transforms of the two noise components. Furthermore, a detailed comparison between the full propagation model and its linearized version was carried out for both single-channel [42] and multi-channel systems [41], the conclusion being that for practical values of the system parameters the linearized model is accurate.…”

Section: Linearized Theoretical Modelmentioning

confidence: 99%

“…The other one is a Si-PhCW consisting of a line defect along the ΓK direction of a PhC slab waveguide with honeycomb air hole lattice with lattice constant, a = 412 nm, hole radius, r = 0.22a, and slab thickness, h = 0.6a. The Si-PhCW is designed to possess both FL and SL spectral regions [41], referred to as Si-PhCW-FL and Si-PhCW-SL, respectively, so as to facilitate the study of the dependence of the system performance on the linear and nonlinear optical coefficients of the waveguide. More specifically, due to their strong dependence on the GV, in the SL regime both the linear and nonlinear optical effects are significantly enhanced as compared to the FL regime.…”

Section: Description Of the Optical Properties Of The Silicon Waveguidesmentioning

confidence: 99%

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Exploiting high-order phase-shift keying modulation and direct-detection in silicon photonic systems

You

Panoiu

2017

Opt. Express

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A computational approach to evaluate the bit-error ratio (BER) in silicon photonic systems employing high-order phase-shift keying (PSK) modulation formats is presented. Specifically, the investigated systems contain a silicon based optical interconnect, namely a strip silicon photonic waveguide or a silicon photonic crystal waveguide, and direct-detection receivers suitable to detect PSK and amplitude-shaped PSK signals. The superposition of a PSK signal and complex additive white Gaussian noise passes through the optical interconnect and subsequently through two detection-branch receivers. To model the signal propagation in the silicon optical interconnects we used a modified nonlinear Schrödinger equation, which incorporates all relevant linear and nonlinear optical effects and the mutual interaction between free-carriers and the optical field. Finally, the BER is calculated by applying a frequency-domain approach based on the Karhunen-Loève series expansion method. Our computational studies of the BER reveal that the optical power, type of PSK modulation, waveguide length, and group-velocity are key factors characterizing the system BER, their influence on BER being more significant in a photonic system with larger nonlinearity. In particular, our analysis shows that the system performance is affected to a much larger extent when the signal propagates in the slow-light regime, despite the fact that this regime allows for a significantly reduced length of optical interconnects.

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“…(4) into Eq. (1) and keeping only the linear terms in a(z, t), we arrive to the following system of equations [41,42]:…”

Section: Linearized Theoretical Modelmentioning

confidence: 99%

Section: Linearized Theoretical Modelmentioning

confidence: 99%

Section: Description Of the Optical Properties Of The Silicon Waveguidesmentioning

confidence: 99%

See 1 more Smart Citation

Exploiting high-order phase-shift keying modulation and direct-detection in silicon photonic systems

You

Panoiu

2017

Opt. Express

Self Cite

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“…In this subsection we briefly outline the frequency domain method. 10,11,20 Thus, in this case the phtocurrent (5) can be expressed as, where the Hermitian kernel in this equation is given by:…”

Section: Frequency Domain Formulationmentioning

confidence: 99%

Calculation of BER in multi-channel silicon optical interconnects: comparative analysis of strip and photonic crystal waveguides

2016

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We present an effective approach to evaluate the performance of multi-channel silicon (Si) photonic systems. The system is composed of strip Si photonic waveguides (Si-PhWs) with uniform cross-section or photonic-crystal (PhC) Si waveguides (Si-PhCWs), combined with a set of direct-detection receivers. Moreover, the optical field in each channel is the superposition of a continuous-wave nonreturn-to-zero ON-OFF keying modulated signal and a white Gaussian noise. In order to characterize the optical signal propagation in the waveguides, an accurate mathematical model describing all relevant linear and nonlinear optical effects and its linearized version is employed. In addition, two semi-analytical methods-time-and frequency-domain Karhunen-Loève series expansion-are used to assess the system bit-error-rate (BER). Our analysis reveals that Si-PhCWs provide similar performance as Si-PhWs, but for 100× shorter length. Importantly, much worse BER is achieved in Si-PhCWs when one operates in slow-light regime, due to the enhanced linear and nonlinear effects.

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“…[14,15] In particular, the strong light confinement enables the dispersion engineering in silicon-on-insulator (SOI) WGs either by changing the transverse size of the WGs or by nanopatterning them. [16][17][18] Furthermore, the SOI WGs possess very large third-order nonlinearities, allowing for the implementation of key active and passive optical functionalities embracing Raman amplification, [19] four-wave mixing (FWM), [20] self-phase modulation, [21] cross-phase modulation, [22] two-photon absorption, [23] and pulse self-steepening. [24] In addition to the SOI WGs, SiO 2 , Si 3 N 4 , GeSi, and Ge-on-Si are also the materials frequently utilized in Si photonics.…”

Section: Introductionmentioning

confidence: 99%

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

You¹,

Luo²,

Yang³

et al. 2020

Laser & Photonics Reviews

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Silicon (Si) photonics have established as leading technologies in addressing the rapidly increasing demands of huge data transfer in optical communication systems with compact footprints, small power consumption, and ultradense bandwidth, which are driven by the next generation supercomputers and big data era. Particularly, Si photonics will penetrate into optical communication links at an ever-small scale, namely chip-to-chip and on-chip. However, the nanostructures made of Si with an indirect bandgap are not ideal candidates for on-chip light sources, modulators, and photodetectors, which most-frequently require optical materials with direct bandgap. Thanks to the advent of graphene, transition metal dichalcogenides and other two-dimensional (2D) materials, which can facilitate extraordinary progresses in improving device performance at the ultrathin scale, their integration with Si photonics furnishes a heterogeneous platform to construct fully functional and highly integrated photonic communication systems. In this work, the current advancements in the on-chip applications of Si photonics-2D materials heterostructures, inclusive of all essential chip-scale modules and integrated circuits, as well as the future prospective and challenges are reviewed and discussed. The present study sets out to objectively measure the feasibility of the hybrid integration between Si photonics and 2D materials in on-chip optical communications and the advanced applications beyond.

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Theoretical Comparative Analysis of BER in Multi-Channel Systems With Strip and Photonic Crystal Silicon Waveguides

Cited by 8 publications

References 24 publications

Exploiting high-order phase-shift keying modulation and direct-detection in silicon photonic systems

Exploiting high-order phase-shift keying modulation and direct-detection in silicon photonic systems

Calculation of BER in multi-channel silicon optical interconnects: comparative analysis of strip and photonic crystal waveguides

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

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