Theoretical Investigation of Trigate AlGaN/GaN HEMTs

Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank

doi:10.1109/ted.2013.2279264

Cited by 42 publications

(24 citation statements)

References 29 publications

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“…The proposed threshold voltage model is verified with the data reproduced from [7] and [13]. The strain relaxation factor X is validated with the data reproduced from [13] as shown in Fig.…”

Section: Resultssupporting

confidence: 53%

“…In conventional AIGaN/GaN HEMT devices, threshold voltage becomes more negative as width becomes narrow [14] and reverse is observed for the trig ate HEMT as width is reduced [5], [7], [13]. The difference in the behavior of the threshold voltage with respect to channel width (as width becomes narrow), indicates that we need different model for the trigate as compared to the conventional planar HEMT.…”

Section: Model Descriptionmentioning

confidence: 99%

“…In the tri-gate HEMT devices, strain relaxation occurs with reduction in the channel width of the device. The variation of the degree of relaxation with channel width [13] 6.0x10·1 is shown in Fig. 1 and is modeled using the channel width dependent function as follows:…”

Section: Model Descriptionmentioning

confidence: 99%

“…The observed shift in threshold voltage with reduction in chan nel width is due to : a) sidewall gates assisted improved gate control on the channel [5], [7], and b) reduction in piezoelectric polarization due to strain relaxation [7], [12). A physical insight of threshold voltage dependency on channel-width is presented by Alsharef et al [13] using numerical simulation. The normally-off mode device operation of AlGaN/GaN based tri-gate/FinFET makes it a promising candidate for the power electronics applications.…”

Section: Introductionmentioning

confidence: 97%

See 3 more Smart Citations

Threshold voltage modeling of GaN based normally-off tri-gate transistor

Yadav

Kushwaha

Agarwal

et al. 2014

2014 Annual IEEE India Conference (INDICON)

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In this paper, a behavioral model of threshold voltage for normally-off (enhancement mode) AIGaN/GaN based tri-gate HEMT is proposed. AIGaN/GaN based tri-gate HEMT devices have additional sidewall gates and show threshold voltage variation with decreasing device width. The proposed model captures strain relaxation with reduction in device width , which is one of the primary reason for change in vt h in AIGaN/GaN tri-gate devices. Model shows excellent agreement with state-of the-art experimental and simulation data.

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Section: Resultssupporting

confidence: 53%

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

Threshold voltage modeling of GaN based normally-off tri-gate transistor

Yadav

Kushwaha

Agarwal

et al. 2014

2014 Annual IEEE India Conference (INDICON)

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“…The reduction of IR depends on Vth of the tri-gate MOS [4], which can be controlled by w and the thickness of the SiO2 [11,16]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Santoruvo

Tandon

et al. 2016

IEEE Trans. Electron Devices

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Abstract-Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates three-dimensional Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density with improved linearity, above 1 A/mm at 5 V when normalized by effective anode width, over 3 orders of magnitude lower reverse leakage current and superior heat dissipation. The sidewall Schottky contacts reduced the turn-on voltage and eliminated the non-ideality caused by the AlGaN barrier. The large surface area of tri-gate architecture greatly enhanced heat dissipation and largely reduced the average temperature as well as thermal resistance of the integrated tri-gate transistors. The trench conduction near SiO2/GaN interface, formed under forward bias at both sidewalls and bottom of nanowire trenches, compensated part of the self-heating degradation and improved the output linearity of the device. Optimal design for the tri-anode structure, based on a model of critical filling factor, was proposed to surmount the issue of partial removal of two-dimensional electron gas (2DEG), unveiling the potential of nanostructured GaN devices to achieve comparable or even larger output current than counterpart planar devices.

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Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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In this work, a comprehensive investigation on the noise performance of novel optimized back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried out using Sentaurus TCAD tool. The microwave‐frequency noise of the device has been analyzed using a Green's function approach, assessing the gate and drain noise spectral densities under different bias conditions such as off‐state, subthreshold state and on‐state condition. More importantly, the G‐R noise component in BB‐trigate HEMT is almost eliminated in comparison to conventional trigate HEMT (C‐trigate HEMT). This is due to use of AlGaN back‐barrier layer (BBL). Subsequently, for the first time, it is reported that the noise parameters such as noise resistance and overall noise figure are drastically reduced to ~22 mΩ and ~0.02 dB respectively at 10 GHz frequency for back‐barrier (BB) trigate HEMT having a scaled gate length of 100 nm. The proposed device shows prominent noise performance than conventional trigate HEMT and thereby, it is highly suitable for designing low noise amplifier for X‐band applications.

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Theoretical Investigation of Trigate AlGaN/GaN HEMTs

Cited by 42 publications

References 29 publications

Threshold voltage modeling of GaN based normally-off tri-gate transistor

Threshold voltage modeling of GaN based normally-off tri-gate transistor

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

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