Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells

Kojima, Kazunobu; Kamon, Hiroaki; Funato, Mitsuru; Kawakami, Yoichi

doi:10.1002/pssc.200779277

Cited by 38 publications

(48 citation statements)

References 15 publications

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“…Some groups find relatively low polarization degrees and therefore lower subband distances [10,24]. Other results are in quantitative agreement with ours [27].…”

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confidence: 91%

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Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Schade

Schwarz

Wernicke

et al. 2011

Physica Status Solidi (b)

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Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k x p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy

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“…Some groups find relatively low polarization degrees and therefore lower subband distances [10,24]. Other results are in quantitative agreement with ours [27].…”

supporting

confidence: 91%

“…The spherical representation of the two top valence subbands The polarization degree of the transition matrix elements for a given subband is obtained by [24] …”

mentioning

confidence: 99%

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Schade

Schwarz

Wernicke

et al. 2011

Physica Status Solidi (b)

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“…[17][18][19] In nonpolar and semipolar QWs, on the other hand, the biaxial stress induces anisotropic strain, which drastically modifies the subband structures and wavefunction character [20][21][22] and induces polarized light emission.…”

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confidence: 99%

Effects of strain on the band structure of group-III nitrides

et al. 2014

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We present a systematic study of strain effects on the electronic band structure of the group-III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density functional theory (DFT) with band-gap-corrected approaches including hybrid functional (HSE) and quasiparticle G 0 W 0 methods. We study strain effects under realistic strain conditions, hydrostatic pressure and biaxial stress. The strain-induced modification of the band structures is found to be nonlinear; transition energies and crystal-field splittings show a strong nonlinear behavior under biaxial stress. For the linear regime around the experimental lattice parameters, we present a

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“…The crystal growth of the semipolar orientation has attracted a great attention to overcome the "green-yellow gap" [3,[7][8][9][10]. There has been some work for studying semipolar InGaN/GaN quantum well LEDs with different growth orientations [4,[11][12][13][14]. They observed an in-plane anisotropy polarization feature of the semipolar quantum well as well as the nonpolar one.…”

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confidence: 97%

“…There have been some theoretical studies focused on the optical anisotropic behavior in the semipolar plane [12,15,16]. However, most are not solved by a self-consistent way, which the Poisson and Schrödinger equations including the effects of quantum confinement and polarization charges are solved numerically.…”

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confidence: 99%

Light emission polarization properties of strained (11$ \bar 2 $2) semipolar InGaN quantum well

Huang

2010

Phys. Status Solidi (c)

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We studied the optical characteristics of a (11$ \bar 2 $2) semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. The self‐consistent Poisson and 6×6 k · p Schrödinger solver has been applied to study the band structure in semipolar InGaN quantum well light emitting diodes. Our work shows an interesting switching behavior of the polarization direction when the indium composition is larger than 40%. The best configuration for the maximized polarization condition has been studied in this paper. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells

Cited by 38 publications

References 15 publications

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Effects of strain on the band structure of group-III nitrides

Light emission polarization properties of strained (11$ \bar 2 $2) semipolar InGaN quantum well

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