We study the generation of broadband THz radiation (~18 THz) with high peak electric field (~0.5 kV/cm) using a low temperature GaAs interdigitated photoconductive antenna and a high-power, high repetition rate, 15 femtosecond Ti:Sapphire oscillator.OCIS codes: (300.6495) Spectroscopy, terahertz; (320.7160) Ultrafast technology Driven by technological and scientific applications, much effort has been directed towards the development of THz sources and detectors with ease-of-use, high signal to noise ratio (SNR), broad bandwidth and large peak electric fields. Among the variety of THz sources, photoconductive antennas have been very promising in regards to the generation of picosecond THz pulses using ultrafast, Ti:Sapphire oscillator systems. Here, the ease-of-use and practicality of such systems, combined with high SNR have driven applications in THz spectroscopy, imaging and detection [1].The development of new antenna geometries and system designs continues to be an active area of research to combine or enhance favourable properties like large spectral bandwidths and/or high THz fields with the practicality and high SNR of photoconductive antennas [2]. In particular, the interdigitated antenna structure ( Fig. 1(a, b)) holds much promise for achieving both of these goals [3][4][5].In these antenna structures, the small electrode spacing (2m) results in faster screening of the applied electric field by the photoexcited carriers and therefore provides broader THz bandwidth [6]. In addition, the small electrode spacing allows for a lower bias voltage, while still providing electric fields near breakdown. This lower bias voltage in turn allows for higher frequency modulations of the antenna to improve SNR with more practical instrumentation. Further, the array structure of the antenna can cover a larger area and thereby accommodate a larger, higher power excitation spot. With suitable modifications in the antenna design to allow the antenna array to generate THz in phase, this design aspect allows for significantly higher peak THz electric fields compared to other antenna structures [3]. The possibility of a larger excitation spot, which covers the entire array also significantly reduces a number of alignment challenges such as reduced diffraction of the emitted THz beam, tight focusing and positioning of the optical excitation spot [8].Interdigitated antennas provide obvious benefits in terms of practicality, broader bandwidth and higher peak electric fields. To take advantage of these one would use the antennas in combination with short pulse, high power, high repetition rate oscillator systems and low-temperature GaAs substrates with short carrier lifetimes. To the best of our knowledge, no such study has yet been conducted. Here, we study the characteristics of the THz emission from an interdigitated photoconductive antenna fabricated on a LT-GaAs wafer. When excited by 15fs, 800nm pulses from a high power (up to ~50 nJ/pulse), high repetition rate (4 MHz) Ti:Sapphire oscillator system, we observe broadband T...