Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

Kanale, Ajit; Baliga, B. Jayant

doi:10.1109/access.2021.3078134

Cited by 11 publications

(1 citation statement)

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“…It has been previously shown that the short-circuit withstand time (tSC) for SiC power MOSFETs is inversely proportional to the magnitude of the saturated drain current [31]. A smaller saturation current under short-circuit conditions, with the SiC MOSFET operating at the on-state gate bias, results is reducing the power dissipation.…”

Section: E Saturated Drain Currentmentioning

confidence: 99%

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

Agarwal

Baliga

2022

IEEE J. Electron Devices Soc.

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Significant impact of the ion-implant straggle of the P + shielding region on the static and dynamic characteristics of 1.2 kV 4H-SiC power MOSFETs is demonstrated in this paper by using analytical and TCAD modelling. The P + region ion-implant straggle not only reduces the JFET width but increases the channel length. This combination is shown to displace a SiC power MOSFET structure optimized without ion-implant straggle away from the optimum JFET width required to achieve the lowest specific on-resistance, resulting in an increase in the specific on-resistance by a factor of 2-3x for the typically used JFET width of 0.7 m. The theoretical analysis is supported by data measured on 1.2 kV SiC power MOSFETs fabricated with channel lengths of 0.3 and 0.5 m using both accumulation and inversion mode channels. The presence of the P + shielding region ion-implant straggle is shown to: (a) increase specific onresistance by 15-30%; (b) suppress short-channel effects; (c) reduce electric field in the gate oxide; (d) reduce the transconductance; (e) reduce saturated drain current; and (f) significantly reduce the gate-drain capacitance and gate charge. Impact of P + shielding region lateral straggle on device cell optimization is an important contribution of this paper.

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Section: E Saturated Drain Currentmentioning

confidence: 99%