Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

Li, Q.F.; Wang, H.F.; Yang, Chaoqun; Li, Q.Q.; Rao, Wei-Feng

doi:10.1016/j.apsusc.2018.01.208

Cited by 25 publications

(7 citation statements)

References 41 publications

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“…However, we do not observe a monotonic behavior. According to longitudinal acoustic phonon DPT, mobility is determined by three basic parameters of effective mass, elastic modulus and deformation potential [26,27,51,77]. The reduced mobility indicates that the elastic modulus plays a dominant role under strain.…”

Section: Electron Mobility From Longitudinal Acoustic Phononmentioning

confidence: 99%

“…Two-dimensional (2D) materials with smooth surfaces can overcome these difficulties [6][7][8][9][10][11][12][13][14][15][16][17][18][19]. At present, 2D semiconductors, including metal dichalcogenides (MoS 2 , HfS 2 , WS 2 , etc) [20][21][22][23][24], black phosphorus (BP) [25][26][27][28] and carbon nitride compound (C 3 N, C 2 N and C 3 N 4 , etc) [29][30][31][32][33], have been extensively studied. However, some studies have found that BP suffers from air instability [34], MoS 2 exhibits a low carrier mobility [35,36], and 2D carbon nitride has a large carrier effective mass [37].…”

Section: Introductionmentioning

confidence: 99%

“…DPT from longitudinal acoustic and optical phonon scattering has been widely used to predict intrinsic mobility of materials [26,27,51,52]. Since these models cannot describe the complex electron-phonon interactions, they only give an approximate result for carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

Shi

Cao

Yang

et al. 2019

J. Phys.: Condens. Matter

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Recently, a novel two-dimensional (2D) semiconductor, InSe, has attracted great attention due to its potential applications in optoelectronic devices and field effect transistors. In this study, phonon-limited mobility is investigated by the first-principles calculation. At 300 K, the intrinsic electron mobilities calculated from the electron-phonon coupling (EPC) matrix element are as high as µ x = 9.85 × 10 2 (zigzag direction) and µ y = 1.06 × 10 3 cm 2 V −1 s −1 (Armchair direction), respectively. The deformation potential theory (DPT) based on longitudinal acoustic and optical phonon scattering is also employed to investigate electron mobility. The mobility from optical phonon scattering is much higher than that from longitudinal acoustic phonon scattering. If the polarization characteristics of InSe are not considered, the electron mobility calculated from EPC matrix element is closed to that from the longitudinal acoustic phonon DPT. In this study, we have also investigated the effect of polarization properties in 2D InSe on electron mobility. At 300 K, the electron mobility for including Fröhlich interaction is reduced to µ x = 2.96 × 10 2 and µ y = 3.34 × 10 2 cm 2 V −1 s −1 . Therefore, the electron mobility for InSe is controlled by the scattering from polar phonons. The mobility can be increased to µ x = 3.46 × 10 2 and µ y = 3.78 × 10 2 cm 2 V −1 s −1 under 4% biaxial strain. This result is compared with the experiment, and some disagreements are explained.

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Section: Electron Mobility From Longitudinal Acoustic Phononmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

Shi

Cao

Yang

et al. 2019

J. Phys.: Condens. Matter

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“…Graphene nanotubes, 1–4 silicon nanotubes, 5–13 and phosphorus nanotubes 14–17 have attracted a lot of attention due to their superior performance, such as ordered tubular structures and controllable electronic and optical properties. Arsenene and antimonene are mechanically stable and have high carrier mobility, 18–20 which introduces new possibilities to the fabrication of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

The electronic and optical properties of silicon doped on arsenic and antimony nanotubes: a first-principles study

Liu

Shao

2023

New J. Chem.

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“…Therefore, additional doping is not necessary if one uses BP as a p-type semiconductor. It is useful if additional doping is avoidable because the doping techniques used for TMDs, such as chemical doping , and electrostatic doping, are effective only for a short time or cause degradation of mobility. , In this study, however, a drop of the dielectric DEME-TFSI IL (diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide ionic liquid) , was sprayed with a micropipette over the p-BP/n-IGZO heterojunction for electrostatic gating in devices. Using the ionic liquid gating technique, a high rectification ratio of 9.1 × 10 4 was obtained.…”

Section: Introductionmentioning

confidence: 99%

Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts

Dastgeer

Khan

Cha

et al. 2019

ACS Appl. Mater. Interfaces

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There have been a few studies of heterojunctions composed of two-dimensional transition-metal dichalcogenides (TMDs) and an oxide layer, but such studies of high-performance electric and optoelectronic devices are essential. Such heterojunctions with low-resistivity metal contacts are needed by the electronics industry to fabricate efficient diodes and photovoltaic devices. Here, a van der Waals heterojunction composed of p-type black phosphorus (p-BP) and n-type indium–gallium–zinc oxide (n-IGZO) films with low-resistivity metal contacts is reported, and it demonstrates high rectification. The low off-state leakage current in the thick IGZO film accounts for the high rectification ratio in a sharp interface of p-BP/n-IGZO devices. For electrostatic gate control, an ionic liquid is introduced to achieve a high rectification ratio of 9.1 × 104. The photovoltaic measurements of p-BP/n-IGZO show fast rise and decay times, significant open-circuit voltage and short-circuit current, and a high photoresponsivity of 418 mA/W with a substantial external quantum efficiency of 12.1%. The electric and optoelectronic characteristics of TMDs/oxide layer van der Waals heterojunctions are attractive for industrial applications in the near future.

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Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

Cited by 25 publications

References 41 publications

Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

The electronic and optical properties of silicon doped on arsenic and antimony nanotubes: a first-principles study

Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts

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