2021
DOI: 10.1016/j.apsusc.2021.150269
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Theoretical studies of SiC van der Waals heterostructures as anodes of Li-ion batteries

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Cited by 67 publications
(33 citation statements)
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“…The calculated formation energies of various defects in graphene are listed in Table . The calculated formation energy of the SW defect in graphene is 4.45 eV, a bit larger than the one for the SiC monolayer . However, it is smaller than those reported in the literature for a monolayer of graphite (4.8 eV by GGA and 5.2 eV by local density approximation), which is mainly due to the different concentration of the SW defect, that is, different sizes of lattice cells used in the calculations.…”
Section: Resultscontrasting
confidence: 60%
See 1 more Smart Citation
“…The calculated formation energies of various defects in graphene are listed in Table . The calculated formation energy of the SW defect in graphene is 4.45 eV, a bit larger than the one for the SiC monolayer . However, it is smaller than those reported in the literature for a monolayer of graphite (4.8 eV by GGA and 5.2 eV by local density approximation), which is mainly due to the different concentration of the SW defect, that is, different sizes of lattice cells used in the calculations.…”
Section: Resultscontrasting
confidence: 60%
“…The calculated formation energy of the SW defect in graphene is 4.45 eV, a bit larger than the one for the SiC monolayer. 43 However, it is smaller than those reported in the literature for a monolayer of graphite (4.8 eV by GGA and 5.2 eV by local density approximation), 44 which is mainly due to the different concentration of the SW defect, that is, different sizes of lattice cells used in the calculations. The SV defect has a much higher formation energy (7.63 eV) than the SW defect, indicating that it is easier for the SW defect to form in experiments.…”
Section: Resultsmentioning
confidence: 82%
“…Graphene and graphene like systems, BN and its derivatives, transition metal di-chacogenides, transition metal nitrides, M-Xenes, phosphorenes and its analogues, carbon nitride systems (g-CN, g-C 3 N 4 , C 2 N, C 3 N) have already been reported to have excellence in this field. [6][7][8][9][10][11][12][13][14][15][16] However it is worth to mention that, introducing porous nature in monolayers abnormally enriches the specific storage capacity. [8,17,18] Graphene, carbon nitride systems (from C 3 N to g-C 3 N 4 ) had encountered similar effects.…”
Section: Introductionmentioning
confidence: 99%
“…The performance of an electrode can be estimated by calculating the open circuit voltage (V) as follows V ¼ À E f e j jn Na considering that the entropy and volume effects are neglected at 0 K. 74 Here, E f is the formation energy, e is the electron charge, and n Na is the number of Na atoms in the unit cell. Likewise, the maximum theoretical storage capacity is given by…”
Section: Resultsmentioning
confidence: 99%
“…where M HSiNW is the relative molecular mass of the H-SiNW, z is the valence of the ionized atom (z = 1), and F is the Faraday constant (26 801 mAh/mol). 74 Figure 7A shows the open circuit voltage (V) as a function of the concentration of Na atoms per unit cell. The results indicate that the maximum and minimum values of V are 4.25, and 3.94 V respectively.…”
Section: Resultsmentioning
confidence: 99%