The adsorptions of iron(II) phthalocyanine (FePc) on
graphene and
defective graphene were investigated systematically using density
functional theory. Three types of graphene defects covering stone-wales
(SW), single vacancy (SV), and double vacancy (DV) were taken into
account, in which DV defects included DV(5-8-5), DV(555-777), and
DV(5555-6-7777). The calculations of formation energies of defects
showed that the SW defect has the lowest formation energy, and it
was easier for DV defects to form compared with the SV defect. It
is more difficult to rotate or move FePc on the surface of defective
graphenes than on the surface of graphene due to bigger energy differences
at different sites. Although the charge analysis indicated the charge
transfers from graphene or defective graphene to FePc for all studied
systems, the electron distributions of FePc on various defective graphenes
were different. Especially for FePc@SV, the d
xy
orbital of Fe in the conduction band moved toward the Fermi
level about 1 eV, and the d
xz
of Fe in
the valence band for FePc@SV also moved toward the Fermi level compared
with FePc@graphene and other FePc@defective graphenes. Between the
planes of FePc and defective graphene, the electron accumulation occurs
majorly in the position of the FePc molecular plane for FePc@SW, FePc@DV(5-8-5),
and FePc@DV(5555-6-7777) as well as FePc@graphene. However, electrons
were accumulated on the upper and lower surfaces of the FePc molecular
plane for FePc@SV and FePc@DV(555-777). Thus, the electron distribution
of FePc can be modulated by introducing the interfaces of different
defective graphenes.