Theoretical study for aerial image intensity in resist in high numerical aperture projection optics and experimental verification with one-dimensional patterns

Abstract

In optical lithography, high-performance exposure tools are indispensable to obtain not only fine patterns but also preciseness in pattern width. Since an accurate theoretical method is necessary to predict these values, some pioneer and valuable studies have been proposed. However, there might be some ambiguity or lack of consensus regarding the treatment of diffraction by object, incoming inclination factor onto image plane in scalar imaging theory, and paradoxical phenomenon of the inclined entrance plane wave onto image in vector imaging theory. We have reconsidered imaging theory in detail and also phenomenologically resolved the paradox. By comparing theoretical aerial image intensity with experimental pattern width for one-dimensional pattern, we have validated our theoretical consideration.

Cross‐Scale Topography Achieved by MOPL with Positive Photoresist to Regulate the Cell Behavior

“…Bitmap modulates the spatial light field distribution of DMD. The correspondence between the pixels of the bitmap and the theoretical size of the fabricated micro‐nano structure is [ 31,32 ] $$$$\begin{equation}W\ = \ N\ \times \ d/\left( {f1/f2} \right)\end{equation}$$$$…”

“…Bitmap modulates the spatial light field distribution of DMD. The correspondence between the pixels of the bitmap and the theoretical size of the fabricated micro-nano structure is [31,32]…”

Multi-scale structure patterning by digital-mask projective lithography with an alterable projective scaling system

“…1(b) shows the simplified ray track diagram for laser beam through the inverted-telescope system according to geometric optics theory. The scale relationship between the polymerization width of the exposed pattern and the size of the DMD dynamic mask pattern was determined according to the following formula 30,31 …”