Theoretical study of a GaAs lateral p-i-n photodetector

Abstract

Effect of donor-complex-defect-induced dipole field on In As ∕ Ga As quantum dot infrared photodetector activation energy

Numerical investigation of monolithic heterojunction and buried layer GaAs lateral p-i-n photodetectors

“…In a previous work, 9 we have theoretically demonstrated that a LPIN device offers superior frequency and responsivity performance over a comparable MSM structure at similar operating dark currents and capacitance. As was shown in Ref.…”

“…9, minority carrier diffusion of electrons or holes generated outside the depletion region within the LPIN photodetector are primarily responsible for restricting the performance of these devices. 9 In this paper, we examine modifications of the LPIN device designed to enhance its frequency performance through the introduction of a heterojunction or a buried charge sheet as shown in Fig. 1.…”

Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode

“…In general cases, we have to calculate the expression a(q) cqpp Ayi ( tjEo (yi)e-Yi (tj)) ] (13) numerically. These equations describes the nonstationary features of carrier transport in a lateral p-i-n photodiode.…”

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

“…Recently, there has been much research for the study and development of high-speed photodetectors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]; these devices find their use in many optoelectronic applications such as optical fiber communication systems, chip-to-chip connections, optical heterodyne conversion, and so on [20][21][22][23][24]. The lateral type photodetectors are by far the most advantageous for use in monolithic GaAs optoelectronic integrated circuits (OEIC) [1,[5][6][7][8][9][10][11][12][13][14][15][16][17]. For a long time, the photodetector of choice in such applications has been the lateral metal-semiconductor-metal (MSM).…”

“…Although the MSM structures present many advantageous features, such as low dark current, low capacitance per unit area, and easy integrability with metal–semiconductor field effect transistor devices, they suffer, however, from low responsivity. Recently, theoretical studies of the lateral p‐i‐n (LPIN) junctions were conducted to assess their potential to present an alternative to the MSM photodetectors in such OEIC applications . However, the need of the p‐doping to fabricate the LPIN makes it not fully compatible with the GaAs OEIC processing.…”