Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode

Suzuki, Gaku; Konno, Kohkichi; Navarro, D.; Sadachika, N.; Mizukane, Y.; Matsushima, Osamu; Miura-Mattausch, M.

doi:10.1109/sispad.2005.201484

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…The analysis of transients taking place in on-chip photodetectors during the detection of subpicosecond laser pulses is a cutting-edge research direction. Different scholars consider the performance of semiconductor photodetectors in some papers (for example, in [23][24][25]). They view the detection of optical pulses lasting much longer than 0.1 ps.…”

Section: Introductionmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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Section: Introductionmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…The physical parameters for the diode are listed inTable 2. The geometry of the device is similar to that of Ref 29…”

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confidence: 99%

Simulation of Thermal Effects in Optoelectronic Devices Using Coupled Energy-Transport and Circuit Models

Brunk

Jüngel

2008

Math. Models Methods Appl. Sci.

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A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the circuit and by the applied voltage at the device contacts, coming from the circuit. The resulting time-dependent model is a system of nonlinear partial differential-algebraic equations. The one-dimensional transient transport equations are numerically discretized in time by the backward Euler method and in space by a hybridized mixed finite-element method. Numerical results for a circuit consisting of a single-mode heterostructure laser diode, a silicon photo diode, and a high-pass filter are presented.

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An all-optical switch/photodetection at 1550 nm, based on a micro-ring resonator array

Rostami¹,

Mohammadzadeh²,

Dolatyari³

et al. 2014

Optik

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Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode

Cited by 4 publications

References 5 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Simulation of Thermal Effects in Optoelectronic Devices Using Coupled Energy-Transport and Circuit Models

An all-optical switch/photodetection at 1550 nm, based on a micro-ring resonator array

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