“…16 Furthermore, since in Zn 1-x Be x O the band gap can theoretically be tuned from 3.37 to 10.60 eV, this materials system may replace Zn 1-x Mg x O solid solutions that are being considered in applications such as field effect transistors, polymer-oxide hybrid solar cells, quantum Hall effect devices, high-k films on Si, and acoustic resonators. [20][21][22][23][24] While there have been some efforts to understand, describe, and measure the lattice parameters, the band gap, and optical properties of Zn 1-x Be x O in thin films, 16,17,[25][26][27][28] the potential of this materials system for applications described above has not been fully explored. Of Dong show that depending on the composition, the alloys may have a different crystal structure than the end components ZnO and BeO.…”